Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100
Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100
This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET…
This article discusses the announcement of the delivery of the CISSOID's first prototype of 3-phase 1200V/100A SiC MOSFET IPMs to Thales…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance…
This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”…
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices
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