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Dialog Semi Enters GaN Power IC Market

Dialog Semi Enters GaN Power IC Market

News Aug 24, 2016 by Jeff Shepard
IPM with SiC Boost Diode for 150kHz Operation

IPM with SiC Boost Diode for 150kHz Operation

new products Aug 21, 2016 by Jeff Shepard
Mitsubishi Launches Super-mini Full SiC DIPIPM

Mitsubishi Launches Super-mini Full SiC DIPIPM

new products Aug 18, 2016 by Jeff Shepard
1-GHz Optically-Isolated Measurements for GaN and SiC

1-GHz Optically-Isolated Measurements for GaN and SiC

new products Aug 16, 2016 by Jeff Shepard
GaN Powers Next-Generation Missile Defense

GaN Powers Next-Generation Missile Defense

News Aug 15, 2016 by Jeff Shepard
Increasing Reliability Data for GaN Devices

Increasing Reliability Data for GaN Devices

new products Jul 31, 2016 by Jeff Shepard
New Material may Exceed GaN Performance

New Material may Exceed GaN Performance

News Jul 28, 2016 by Jeff Shepard
Gate Drivers for IGBTs and SiC MOSFETs

Gate Drivers for IGBTs and SiC MOSFETs

new products Jul 28, 2016 by Jeff Shepard
Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits

Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits

News Jul 27, 2016 by Jeff Shepard
LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.

Technical Articles Jul 26, 2016 by Raffael Schnell
EPC taps Ismosys to Support Accelerating European GaN Growth

EPC taps Ismosys to Support Accelerating European GaN Growth

News Jul 25, 2016 by Jeff Shepard
Kettering tapped to Develop SiC EV Charger for PowerAmerica

Kettering tapped to Develop SiC EV Charger for PowerAmerica

News Jul 20, 2016 by Jeff Shepard
1200V SiC MOSFET in SOT227 MiniBLOC

1200V SiC MOSFET in SOT227 MiniBLOC

new products Jul 19, 2016 by Jeff Shepard
Operating SiC Power Devices at 300 Degrees C

Operating SiC Power Devices at 300 Degrees C

News Jul 18, 2016 by Jeff Shepard
EPC and ASD Form Value-added GaN Partnership

EPC and ASD Form Value-added GaN Partnership

News Jul 14, 2016 by Jeff Shepard
SiC-based Power Module includes BJTs and Drivers

SiC-based Power Module includes BJTs and Drivers

new products Jul 14, 2016 by Jeff Shepard
Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100

new products Jul 13, 2016 by pSemi Corporation
80V Half-Bridge 33MHz GaN FET Driver

80V Half-Bridge 33MHz GaN FET Driver

new products Jul 11, 2016 by Jeff Shepard
SiC IC Design Process Model Grant from NASA

SiC IC Design Process Model Grant from NASA

News Jul 10, 2016 by Jeff Shepard
1.2kV GaN Switch Handles over 20A

1.2kV GaN Switch Handles over 20A

News Jul 07, 2016 by Jeff Shepard