This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.
Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™…
Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V…
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing…
This article explores the wide bandgap switching devices design tradeoffs for efficiency and power factor in implementing designs at higher…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
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