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GaN Transistors Enable Personalized Energy Systems

GaN Transistors Enable Personalized Energy Systems

Multilevel GaN Converter from AT&S and Fraunhofer

Multilevel GaN Converter from AT&S and Fraunhofer


News Apr 25, 2017 by Jeff Shepard
Announcing Collaboration Sales in Japan

Announcing Collaboration Sales in Japan

ROHM and SEMIKRON will kick-off collaboration sales of SiC power devices and modules, to contribute to the innovative evolution of the Japanese…


new products Apr 24, 2017 by ROHM
ROHM Expands its Range of SiC and Si Power Devices

ROHM Expands its Range of SiC and Si Power Devices

Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money

Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money


News Apr 19, 2017 by Jeff Shepard
Millions of GaN Device Hours with Zero Failures

Millions of GaN Device Hours with Zero Failures


News Apr 12, 2017 by Jeff Shepard
Reliable GaN Switches for Datacenter and Telecom Power

Reliable GaN Switches for Datacenter and Telecom Power

6-GHz GaN Power Amplifier Modules

6-GHz GaN Power Amplifier Modules

Third-Generation SiC MOSFET Platform expanded to 1200V

Third-Generation SiC MOSFET Platform expanded to 1200V

Wolfspeed expands its innovative C3M™ platform through the introduction of 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Apr 07, 2017 by Wolfspeed
SiC at Japan’s Synchrotron Radiation Research Institute

SiC at Japan’s Synchrotron Radiation Research Institute


News Apr 06, 2017 by Jeff Shepard
Ballistic Missile System to get GaN Upgrade

Ballistic Missile System to get GaN Upgrade


News Apr 06, 2017 by Jeff Shepard
1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

A Practical Study on Three-Level Hybrid SiC/Si Inverters

A Practical Study on Three-Level Hybrid SiC/Si Inverters

This article highlights Infineon Technologies Italia S.r.l - Austria AG demonstration of the use of SiC devices that allows high degree of freedom…


1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC Dual Schottky Diodes in SOT-227

1200V SiC MOSFET Technology Platform to be Revealed

1200V SiC MOSFET Technology Platform to be Revealed

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

Extremely Efficient Energy Storage Based On Three-Level Silicon Carbide Power Module

This article features the benefits of using SiC Power Modules in terms of energy conversion efficiency, cost-efficiency and environmental energy…


ADI Acquires Broadband GaAs and GaN Amplifier Tech

ADI Acquires Broadband GaAs and GaN Amplifier Tech


News Mar 29, 2017 by Jeff Shepard
State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

State of the SiC MOSFET: Device evolution, technology merit, and commercial prospects

This article features Littelfuse Inc. SiC MOSFET device evolution, technology merit, and commercial success and substantial role for green energy…


Wide Bandgap Power Electronics Workshop in Sweden

Wide Bandgap Power Electronics Workshop in Sweden


News Mar 27, 2017 by Jeff Shepard
650V GaN FETs are Automotive-Qualified

650V GaN FETs are Automotive-Qualified