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Full-SiC 1.2kV Module Production Starts at Infineon

Full-SiC 1.2kV Module Production Starts at Infineon

Integrated 600V GaN Half-Bridge for E-Mobility

Integrated 600V GaN Half-Bridge for E-Mobility

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


DuPont and SBE Collaborate on High-Temp Caps for SiC Designs

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs


News May 10, 2017 by Jeff Shepard
GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency

GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency


News May 10, 2017 by Jeff Shepard
X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers

X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers


News May 09, 2017 by Jeff Shepard
1200V SiC Diodes Deliver Superior Efficiency and Robustness

1200V SiC Diodes Deliver Superior Efficiency and Robustness

GaN Power IC Experts to Present at PCIM Europe 2017

GaN Power IC Experts to Present at PCIM Europe 2017

DC-DC Converters Optimized to Power IGBT & SiC Drivers

DC-DC Converters Optimized to Power IGBT & SiC Drivers

Transphorm Bringing the GaN Revolution to Nuremberg

Transphorm Bringing the GaN Revolution to Nuremberg

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

This article features the full design support capabilities for a new evaluation board utilizing Wolfspeed's C2M1000170J for auxiliary power…


GaN Transistors Enable Personalized Energy Systems

GaN Transistors Enable Personalized Energy Systems

Multilevel GaN Converter from AT&S and Fraunhofer

Multilevel GaN Converter from AT&S and Fraunhofer


News Apr 25, 2017 by Jeff Shepard
Announcing Collaboration Sales in Japan

Announcing Collaboration Sales in Japan

ROHM and SEMIKRON will kick-off collaboration sales of SiC power devices and modules, to contribute to the innovative evolution of the Japanese…


new products Apr 24, 2017 by ROHM
ROHM Expands its Range of SiC and Si Power Devices

ROHM Expands its Range of SiC and Si Power Devices

Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money

Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money


News Apr 19, 2017 by Jeff Shepard
Millions of GaN Device Hours with Zero Failures

Millions of GaN Device Hours with Zero Failures


News Apr 12, 2017 by Jeff Shepard
Reliable GaN Switches for Datacenter and Telecom Power

Reliable GaN Switches for Datacenter and Telecom Power

6-GHz GaN Power Amplifier Modules

6-GHz GaN Power Amplifier Modules