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Infineon to Highlight GaN, SiC and Si Power Electronics Portfolio

Infineon to Highlight GaN, SiC and Si Power Electronics Portfolio


News Feb 16, 2018 by Paul Shepard
EPC to Showcase GaN FETs and ICs in End Products at APEC

EPC to Showcase GaN FETs and ICs in End Products at APEC


News Feb 16, 2018 by Paul Shepard
Demonstrating How GaN has Transformed Power Conversion Products

Demonstrating How GaN has Transformed Power Conversion Products


News Feb 15, 2018 by Paul Shepard
GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

MACOM and STMicro Bringing GaN-on-Silicon to Mainstream RF Markets

MACOM and STMicro Bringing GaN-on-Silicon to Mainstream RF Markets


News Feb 07, 2018 by Paul Shepard
Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

1200V GaN-based Power Modules from VisIC and TSMC

1200V GaN-based Power Modules from VisIC and TSMC

GaN Power ICs Enable the New Revolution in Power Electronics

GaN Power ICs Enable the New Revolution in Power Electronics

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…


Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

Akash Raises $3.1 Million for GaN-on-Diamond Technology

Akash Raises $3.1 Million for GaN-on-Diamond Technology


News Feb 01, 2018 by Paul Shepard
6.5kV Full-SiC Power Module Claims World’s Highest Power Density

6.5kV Full-SiC Power Module Claims World’s Highest Power Density


News Jan 31, 2018 by Paul Shepard
GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

Porous SiC for Advanced Sensors and Supercapacitors

Porous SiC for Advanced Sensors and Supercapacitors


News Jan 23, 2018 by Paul Shepard
SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers


News Jan 23, 2018 by Paul Shepard
1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family


new products Jan 16, 2018 by Littelfuse
3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.


GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…


new products Jan 11, 2018 by Ascatron
GaN Enables 1600W Titanium Power Supply for Gamers

GaN Enables 1600W Titanium Power Supply for Gamers


News Jan 09, 2018 by Paul Shepard