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GaN Power ICs Enable the New Revolution in Power Electronics

GaN Power ICs Enable the New Revolution in Power Electronics

This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN…

Technical Articles Feb 04, 2018 by Stephen Oliver
Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

new products Feb 02, 2018 by Paul Shepard
Akash Raises $3.1 Million for GaN-on-Diamond Technology

Akash Raises $3.1 Million for GaN-on-Diamond Technology

News Feb 01, 2018 by Paul Shepard
6.5kV Full-SiC Power Module Claims World’s Highest Power Density

6.5kV Full-SiC Power Module Claims World’s Highest Power Density

News Jan 31, 2018 by Paul Shepard
GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

new products Jan 23, 2018 by Paul Shepard
Porous SiC for Advanced Sensors and Supercapacitors

Porous SiC for Advanced Sensors and Supercapacitors

News Jan 23, 2018 by Paul Shepard
SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers

News Jan 23, 2018 by Paul Shepard
1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

new products Jan 16, 2018 by Paul Shepard
Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family

new products Jan 16, 2018 by Littelfuse
3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

Technical Articles Jan 13, 2018 by Nils Soltau
GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

new products Jan 11, 2018 by Paul Shepard
Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…

new products Jan 11, 2018 by Ascatron
GaN Enables 1600W Titanium Power Supply for Gamers

GaN Enables 1600W Titanium Power Supply for Gamers

News Jan 09, 2018 by Paul Shepard
GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

News Jan 07, 2018 by Paul Shepard
Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

new products Dec 22, 2017 by Paul Shepard
Single Device Capable of Dual Transistor Operation Saves Energy

Single Device Capable of Dual Transistor Operation Saves Energy

News Dec 21, 2017 by Paul Shepard
40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

new products Dec 19, 2017 by Paul Shepard
Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

News Dec 12, 2017 by Paul Shepard
Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

News Dec 11, 2017 by Paul Shepard
Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

News Dec 08, 2017 by Paul Shepard