ROHM has recently announced the development of a high-efficiency power management IC optimized for Freescale™…
ROHM has recently announced the development of a high-efficiency power management IC optimized for Freescale™ Semiconductor's i.MX 6SoloLite…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers…
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.