ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.
Facebook
Google
GitHub
Linkedin