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650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IGBT Gate Drive Operates at 3.3kV, 4.5kV and 6.5kV

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Concept extends HV IGBT Gate Driver Cores and adds 3D STEP Files

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard
IGBT and Rectifier Diode Modules from Littelfuse

IGBT and Rectifier Diode Modules from Littelfuse

Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

HY-LINE now offering Transphorm 600V GaN Devices in Europe

HY-LINE now offering Transphorm 600V GaN Devices in Europe


News May 20, 2014 by Jeff Shepard
Major GaN Developments at PCIM

Major GaN Developments at PCIM

Toshiba Extends DTMOS IV Super Junction Power MOSFET Family to 650V

Toshiba Extends DTMOS IV Super Junction Power MOSFET Family to 650V

Akros Silicon Names Fred Greenfeld as Director of Applications

Akros Silicon Names Fred Greenfeld as Director of Applications


News May 18, 2014 by Jeff Shepard
All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

Mitsubishi  showing Hybrid SiC Power Modules at PCIM

Mitsubishi showing Hybrid SiC Power Modules at PCIM

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment


News May 13, 2014 by Jeff Shepard
1.2KV SiC MOSFET in a MiniBLOC SOT-227

1.2KV SiC MOSFET in a MiniBLOC SOT-227

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

Discrete 650V SiC Rectifiers rated for 20A and 50A

Discrete 650V SiC Rectifiers rated for 20A and 50A

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning