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IDT and EPC Collaborate to Integrate GaN and Si Devices

IDT and EPC Collaborate to Integrate GaN and Si Devices

News May 25, 2015 by Jeff Shepard
ON Semiconductor joins Thread Group

ON Semiconductor joins Thread Group

News May 21, 2015 by Jeff Shepard
Silicon SPDT Switch Delivers Fast Settling Time

Silicon SPDT Switch Delivers Fast Settling Time

new products May 21, 2015 by Jeff Shepard
Digital Isolator for IGBT Gate Drive for Motor Applications

Digital Isolator for IGBT Gate Drive for Motor Applications

new products May 20, 2015 by Jeff Shepard
GaN Systems Showcases Customer Products at PCIM

GaN Systems Showcases Customer Products at PCIM

News May 19, 2015 by Power Pulse1595211359
60A 600V Enhancement Mode GaN Switch

60A 600V Enhancement Mode GaN Switch

new products May 19, 2015 by Jeff Shepard
1200V Dual-Channel IGBT Driver Eliminates Opto-Couplers

1200V Dual-Channel IGBT Driver Eliminates Opto-Couplers

new products May 19, 2015 by Jeff Shepard
X-FAB and Exagan Partner on 200mm GaN-on-Silicon Wafers

X-FAB and Exagan Partner on 200mm GaN-on-Silicon Wafers

News May 18, 2015 by Jeff Shepard
Fairchild Stretching the ‘Ideal’ Limits of Silicon IGBTs

Fairchild Stretching the ‘Ideal’ Limits of Silicon IGBTs

new products May 18, 2015 by Power Pulse1595211359
Vertical High-Voltage GaN Power Device Technology

Vertical High-Voltage GaN Power Device Technology

new products May 18, 2015 by Power Pulse1595211359
IGBT Modules handle 75 to 229 kW

IGBT Modules handle 75 to 229 kW

new products May 18, 2015 by Jeff Shepard
Smallest Enhancement-Mode 600V GaN Power Transistors

Smallest Enhancement-Mode 600V GaN Power Transistors

new products May 17, 2015 by Power Pulse1595211359
Cascode Switches the Fast Route to Higher Efficiency

Cascode Switches the Fast Route to Higher Efficiency

This article offers discusses the cascode switches which is the fastest and most cost-effective way to improve the efficiency of SMPS.

Technical Articles May 17, 2015 by Artur Seibt
Packaging GaN in a TO247

Packaging GaN in a TO247

This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.

Technical Articles May 15, 2015 by Jim Honea
SiC and more from ROHM Semiconductor at Techno Frontier

SiC and more from ROHM Semiconductor at Techno Frontier

News May 14, 2015 by Power Pulse1595211359
Co-Packaged SiC Transistor and Diodes in Mini-Modules

Co-Packaged SiC Transistor and Diodes in Mini-Modules

new products May 14, 2015 by Jeff Shepard
Fourth-Generation GaN-on-Si Surpasses LDMOS

Fourth-Generation GaN-on-Si Surpasses LDMOS

News May 13, 2015 by Jeff Shepard
IGBT Modules have Improved Thermal and Power Cycling

IGBT Modules have Improved Thermal and Power Cycling

new products May 13, 2015 by Power Pulse1595211359
900V / 32A SiC MOSFETs Outperform Silicon

900V / 32A SiC MOSFETs Outperform Silicon

new products May 12, 2015 by Jeff Shepard
£9.5 Million SiC Initiative to Improve Electric Grid Efficiency

£9.5 Million SiC Initiative to Improve Electric Grid Efficiency

News May 10, 2015 by Jeff Shepard