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Isolated FET Drivers Enable SSRs without Optocouplers

Isolated FET Drivers Enable SSRs without Optocouplers

Flexible, Robust, IGBT Gate Drivers for 4500V Applications

Flexible, Robust, IGBT Gate Drivers for 4500V Applications

Full SiC 1500V PV Inverters are 99% Efficient

Full SiC 1500V PV Inverters are 99% Efficient

Highest Power L-Band Radar GaN HEMT

Highest Power L-Band Radar GaN HEMT

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

Novel 100V Power MOSFET Technology with Soft Body Diode Recovery

Novel 100V Power MOSFET Technology with Soft Body Diode Recovery

This article discusses Fairchild Semiconductor's latest Generation 100V MOSFET and its benefits for low loss, low noise switching converter…


SiC Reduces Size of Railroad Battery Charger by 10X

SiC Reduces Size of Railroad Battery Charger by 10X


News Sep 15, 2016 by Jeff Shepard
WiTricity Bolsters Team to Expand Semiconductor Offering

WiTricity Bolsters Team to Expand Semiconductor Offering


News Sep 14, 2016 by Jeff Shepard
GaN Enhances Efficiency of Redundant Power Supplies

GaN Enhances Efficiency of Redundant Power Supplies

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

6-Watt DC-DCs for IGBT, SiC, and MOSFET Gate Drives

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

SiC FETs Shrink 5kW Rack-Mounted Distributed UPS

Building Higher Reliability Power MOSFETs at a Lower Cost

Building Higher Reliability Power MOSFETs at a Lower Cost

This article discusses the advantages and the promising benefits of SiC MOSFETs for power conversion systems in PV inverters, data centers, and more.


0.080-Ohm 12A / 650V GaN Switches

0.080-Ohm 12A / 650V GaN Switches

How Off-Board Charger Can Benefit from the Rapid Implementation of Power Semiconductors

How Off-Board Charger Can Benefit from the Rapid Implementation of Power Semiconductors

This article discusses the requirements for off-board electric vehicle chargers and introduces Vincotech's platform for chargers OEM.


220W GaN HEMT for 2.6GHz 4G Transceivers

220W GaN HEMT for 2.6GHz 4G Transceivers

DC-DCs Drive 4.5kV and 6.5kV IGBT Modules

DC-DCs Drive 4.5kV and 6.5kV IGBT Modules

VIP Interview with Steve Sanghi CEO Microchip

VIP Interview with Steve Sanghi CEO Microchip

Henning Wriedt: Mr. Sanghi, you are the CEO of Microchip Technology for 25 years - Congratulations! In a nutshell, what happened in the MCU market…


Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

Documenting GaN Technology Reliability after Millions of Device Hours of Rigorous Stress Testing

This article introduces the release of EPC's Phase Eight Reliability Report showing the results of qualification stress tests of eGaN FETs and…


new products Sep 03, 2016 by EPC
GaN Systems’ Founders Girvan Patterson and John Roberts to Retire

GaN Systems’ Founders Girvan Patterson and John Roberts to Retire


News Aug 25, 2016 by Jeff Shepard
Dialog Semi Enters GaN Power IC Market

Dialog Semi Enters GaN Power IC Market


News Aug 24, 2016 by Jeff Shepard