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Rethinking the Power MOSFET Figure of Merit

Rethinking the Power MOSFET Figure of Merit

This article highlights Vishay Siliconix Figure of Merit (FOM) brief history with power MOSFET and comparison one design platform to another.


Polymer-Coated Silicon Nanosheets as Graphene Alternative

Polymer-Coated Silicon Nanosheets as Graphene Alternative


News Mar 09, 2017 by Jeff Shepard
GaN Power ICs and Ten Technical Papers on Show in Tampa

GaN Power ICs and Ten Technical Papers on Show in Tampa

RFHIC acquiring GaN-on-Diamond Tech from E6

RFHIC acquiring GaN-on-Diamond Tech from E6


News Mar 09, 2017 by Jeff Shepard
IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability.


SiC Power Electronics gets GE $4.1 Million from U.S. Army

SiC Power Electronics gets GE $4.1 Million from U.S. Army


News Mar 08, 2017 by Jeff Shepard
EPC to Showcase Life-Changing Applications Using GaN

EPC to Showcase Life-Changing Applications Using GaN

Mitsubishi Claims Smallest SiC Inverter for HEVs

Mitsubishi Claims Smallest SiC Inverter for HEVs


News Mar 08, 2017 by Jeff Shepard
GaN-on-Si Devices Show No Degradation from Irradiation

GaN-on-Si Devices Show No Degradation from Irradiation


News Mar 07, 2017 by Jeff Shepard
Mind the Gap  Wide Band Gap Semiconductors are Gaining Importance

Mind the Gap Wide Band Gap Semiconductors are Gaining Importance

Designers of power supplies, motor control and inverter systems, RF circuitry, photovoltaic circuits and a variety of other power switching schemes…


Misubishi adds 600V SiC Schottky-Barrier Diodes

Misubishi adds 600V SiC Schottky-Barrier Diodes

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
Littelfuse Owns Majority of SiC Device Maker Monolith Semi

Littelfuse Owns Majority of SiC Device Maker Monolith Semi


News Mar 02, 2017 by Jeff Shepard
GaN enables Wide-Input and Compact 12W DC-DCs

GaN enables Wide-Input and Compact 12W DC-DCs


News Mar 02, 2017 by Jeff Shepard
SOI Wafer is a Suitable Substrate for GaN Crystals

SOI Wafer is a Suitable Substrate for GaN Crystals


News Mar 02, 2017 by Jeff Shepard
600V MOSFET with Integrated Fast Body Diode

600V MOSFET with Integrated Fast Body Diode

SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

TVS Diode Arrays Safeguard HBLED Strings from ESD EFT Damage

TVS Diode Arrays Safeguard HBLED Strings from ESD EFT Damage

Littelfuse, Inc. introduces a series of TVS Diode Arrays (SPA® Diodes) designed as a protection for electronic equipment pins from ESD or EFT


new products Feb 27, 2017 by Littelfuse
Enhanced Radiation Hardened MOSFET Family for Space

Enhanced Radiation Hardened MOSFET Family for Space

IR HiRel, an Infineon Technologies AG company, has launched its first radiation hardened MOSFETs based on the proprietary N-channel R9 technology…


Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…