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Misubishi adds 600V SiC Schottky-Barrier Diodes

Misubishi adds 600V SiC Schottky-Barrier Diodes

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.  


new products Mar 03, 2017 by EPC
Littelfuse Owns Majority of SiC Device Maker Monolith Semi

Littelfuse Owns Majority of SiC Device Maker Monolith Semi


News Mar 02, 2017 by Jeff Shepard
GaN enables Wide-Input and Compact 12W DC-DCs

GaN enables Wide-Input and Compact 12W DC-DCs


News Mar 02, 2017 by Jeff Shepard
SOI Wafer is a Suitable Substrate for GaN Crystals

SOI Wafer is a Suitable Substrate for GaN Crystals


News Mar 02, 2017 by Jeff Shepard
600V MOSFET with Integrated Fast Body Diode

600V MOSFET with Integrated Fast Body Diode

SiC Gate Driver Optimized for 62mm Modules

SiC Gate Driver Optimized for 62mm Modules

TVS Diode Arrays Safeguard HBLED Strings from ESD EFT Damage

TVS Diode Arrays Safeguard HBLED Strings from ESD EFT Damage

Littelfuse, Inc. introduces a series of TVS Diode Arrays (SPA® Diodes) designed as a protection for electronic equipment pins from ESD or EFT


new products Feb 27, 2017 by Littelfuse
Enhanced Radiation Hardened MOSFET Family for Space

Enhanced Radiation Hardened MOSFET Family for Space

IR HiRel, an Infineon Technologies AG company, has launched its first radiation hardened MOSFETs based on the proprietary N-channel R9 technology…


Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

Ag-Sintering as an Enabler for Thermally Demanding Electronic and Semiconductor Applications

This article highlights Advanced Packaging Center and Alpha Assembly Solutions Silver (Ag) sintering proven and reliable bonding technology for…


Integrated MOSFET Voltage Regulator for PoL Designs

Integrated MOSFET Voltage Regulator for PoL Designs

Third-Generation MOSFET Platform Expanded to 1200V

Third-Generation MOSFET Platform Expanded to 1200V

Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging


new products Feb 23, 2017 by Wolfspeed
Transphorm to Rev High-Voltage GaN at APEC

Transphorm to Rev High-Voltage GaN at APEC

1200V 75mOhm SiC FET in Low-Inductance Package

1200V 75mOhm SiC FET in Low-Inductance Package

The Creation and Potential Cell Structures of SiC Devices

The Creation and Potential Cell Structures of SiC Devices

> <p>This article highlights ROHM about the potential structures of SiC devices, focusing on different structures and showing that…


High Voltage IGBT Modules in the 3300 V Class

High Voltage IGBT Modules in the 3300 V Class

This article describes the basic points of the X-Series design including the improvements contributing to a safe operation of the device.


Pilot Production Coming for High-Performance PV Silicon

Pilot Production Coming for High-Performance PV Silicon


News Feb 20, 2017 by Jeff Shepard
Bulk AlN Platform for GaN High Voltage and Power

Bulk AlN Platform for GaN High Voltage and Power


News Feb 20, 2017 by Jeff Shepard
MOSFET Relays for 60V and 350V AC or DC Switching

MOSFET Relays for 60V and 350V AC or DC Switching

Integrated Half-Bridge GaN Power IC

Integrated Half-Bridge GaN Power IC