600V MOSFET with Integrated Fast Body Diode

Housed in the compact DPAK package, the 600V STD5N60DM2 is the latest addition to STMicroelectronics' MDmesh DM2 series of super-junction MOSFETs with integrated fast body diode. With an on-state resistance of 1.55Ω (max), a 3.5A drain current (max), low Qrr and high dv/dt capability, it allows faster and more efficient switching in server, solar micro-inverters, lighting and home appliance applications in full-bridge and half-bridge topologies.

The very low recovery charge (Qrr) of 109nC (typical) and time (trr) of 58nsec (typical) combined with low RDS(on) and dv/dt capability of 40V/nsec, renders this high-voltage N-channel Power MOSFET suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features and specifications include: 45W total power dissipation; thermal resistance junction-to-case of 2.78 degrees C per Watt; Input capacitance (Ciss) of 375pF; Output capacitance (Coss) of 13pF; Total gate charge (Qg) of 8.6nC; Gate-source charge (Qgs) of 2nC; and Gate-drain charge (Qgd) of 5.2nC.

The latest MDmeshâ„¢ DM2 N-channel Power MOSFET transistors from STMicroelectronics create new opportunities for power-supply designers to achieve greater efficiency in low-voltage power supplies. ST is addressing the challenge of delivering power conversion for home appliances, consumer devices and LED drivers with their best power-density solution, which combines the most advanced power-transistor structure with a compact, cost-effective packaging.