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II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program

II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program


News Jan 29, 2019 by Scott McMahan
600V MOSFET with 3.1Ω*nc FOM for Telecom and Industrial SMPS and PFC

600V MOSFET with 3.1Ω*nc FOM for Telecom and Industrial SMPS and PFC

Maxims Buck Converters and Controllers Deliver Smallest Most Efficient High-Voltage Automotive Power Solutions

Maxims Buck Converters and Controllers Deliver Smallest Most Efficient High-Voltage Automotive Power Solutions

Maxim Integrated Products, Inc. today announced power-management ICs offering the industry’s smallest solution size and highest efficiency to…


2.5A IGBT and MOSFET Driver for Devices up to 1200V / 100A

2.5A IGBT and MOSFET Driver for Devices up to 1200V / 100A

SiC-based 60kW Interleaved Boost Converter Reference Design

SiC-based 60kW Interleaved Boost Converter Reference Design

1700V X-Series HVIGBT Power Modules with Excellent Performance and Reliability

1700V X-Series HVIGBT Power Modules with Excellent Performance and Reliability

This article introduces the new generation of 1700V IGBT power modules called X-Series from Mitsubishi Electric that satisfies the requirements of…


PSMA/PELS Sponsors Pre-APEC Capacitors in Power Electronics Workshop

PSMA/PELS Sponsors Pre-APEC Capacitors in Power Electronics Workshop

The Power Sources Manufacturers Association (PSMA) and the IEEE Power Electronics Society (IEEE PELS) are jointly sponsoring an all-day workshop.


new products Jan 24, 2019 by PSMA
GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

Quantum Physics of Paint-on Semiconductor Reveals Light and Solar Potential

Quantum Physics of Paint-on Semiconductor Reveals Light and Solar Potential


News Jan 18, 2019 by Scott McMahan
Hermetic 1200V SiC Power FETs

Hermetic 1200V SiC Power FETs

GaN Enables 504W Power Supply Module to be 28 Percent Smaller

GaN Enables 504W Power Supply Module to be 28 Percent Smaller


News Jan 16, 2019 by Scott McMahan
ULVAC Inc and Oxford Instruments Plasma Technology Collaborate to Bring Atomic Scale Processing Solutions to the Japanese Power and RF Markets

ULVAC Inc and Oxford Instruments Plasma Technology Collaborate to Bring Atomic Scale Processing Solutions to the Japanese Power and RF Markets

Oxford Instruments Plasma Technology announces a key collaboration which will bring leading-edge deposition and etch technology solutions to GaN-…


Alpha and Omega Semiconductor Introduces High-Current EZ Buck Regulator

Alpha and Omega Semiconductor Introduces High-Current EZ Buck Regulator

Alpha and Omega Semiconductor Limited today introduced a new family of EZBuck™ regulators.


AEC Qualified eGaN FETs Help Lidar Systems See Better Increase Efficiency and Reduce Costs in 48 V Automotive Power Systems

AEC Qualified eGaN FETs Help Lidar Systems See Better Increase Efficiency and Reduce Costs in 48 V Automotive Power Systems

EPC announces that its EPC2206 and EPC2212 discrete transistors are AEC Q101 qualified.


new products Jan 16, 2019 by EPC
Silicon Nanoparticles Found to Increase Lithium-Ion Battery Capacity Ten Times

Silicon Nanoparticles Found to Increase Lithium-Ion Battery Capacity Ten Times


News Jan 15, 2019 by Scott McMahan
Researchers Develop Method for Finding SiC Transistor Defects

Researchers Develop Method for Finding SiC Transistor Defects


News Jan 15, 2019 by Scott McMahan
Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1700V SiC Schottky diode that features essentially no switching losses and the…


new products Jan 15, 2019 by Wolfspeed
Making GaN Power Electronics Universal

Making GaN Power Electronics Universal

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.


AI and Digitally-Controlled Ultra-Wideband GaN RF Amplifier for Mobile Base Stations

AI and Digitally-Controlled Ultra-Wideband GaN RF Amplifier for Mobile Base Stations


News Jan 10, 2019 by Scott McMahan