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Nexperia Achieves 35 Revenue Growth in First Two Years as a Standalone Company

Nexperia Achieves 35 Revenue Growth in First Two Years as a Standalone Company

 Nexperia, the global leader in discretes, logic, and MOSFET devices, today announced that in just two years as a standalone company, it is…


new products Mar 06, 2019 by Nexperia
GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems Debuts Suite of Low Cost High Performance GaN Power Transistors

GaN Systems announced the availability of the GS-065 low current transistor line.


new products Mar 05, 2019 by GaN Systems
Indium Corporation Features Indium and Gallium at SVC TechCon 2019

Indium Corporation Features Indium and Gallium at SVC TechCon 2019

Indium Corporation will feature its indium and gallium metals and compounds, and their related reclaim services, at SVC TechCon 2019, April 27-May…


New Power-Supply Transformers Complement Power Integrations SCALEiDriver GateDriver IC Family

New Power-Supply Transformers Complement Power Integrations SCALEiDriver GateDriver IC Family

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a range of…


GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters

GaN Power ICs Handle 27W to 3.2kW for Next-Gen Power Converters


News Mar 04, 2019 by Scott McMahan
Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

Automotive SiC MOSFETs in LowInductive SMD Package with Kelvin Source

This article discusses the performance benefits arising from the use of a low-inductive SMD package with a Kelvin-Source pin for fast SiC MOSFETs.


ON Semiconductor Opens Bangalore Facility to Integrate Operations in India

ON Semiconductor Opens Bangalore Facility to Integrate Operations in India


News Mar 03, 2019 by Scott McMahan
Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as new President for Product Area Surface and Joining Technologies

Hans Keller joins Höganäs as President Product Area Surface & Joining Technologies on 1 March 2019.


new products Mar 01, 2019 by Hoganas
New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…


JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

 JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices


new products Mar 01, 2019 by JEDEC
Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…


Infineon to Showcase Array of Power Management Solutions at APEC

Infineon to Showcase Array of Power Management Solutions at APEC


News Feb 28, 2019 by Paul Shepard
14mm PD GaN Charger at MWC Barcelona 2019

14mm PD GaN Charger at MWC Barcelona 2019


News Feb 28, 2019 by Paul Shepard
Transphorm’s Gen III GaN Platform Earns Automotive Qualification

Transphorm’s Gen III GaN Platform Earns Automotive Qualification


News Feb 28, 2019 by Paul Shepard
8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101

EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101


News Feb 26, 2019 by Paul Shepard
Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

Xilinx and Infineon Collaborate on Power Solutions for the Zynq UltraScale  MPSoC and RFSoC Families

Xilinx and Infineon Collaborate on Power Solutions for the Zynq UltraScale MPSoC and RFSoC Families

Xilinx Inc. and Infineon Technologies AG are jointly providing scalable power supplies for the Xilinx® Zynq® UltraScale™ + MPSoC and RFSoC…


MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout

MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout


News Feb 25, 2019 by Scott McMahan
GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET

GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET


News Feb 23, 2019 by Scott McMahan