UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs
UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs
There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy…
There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…
This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power…
This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.
This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as…
This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…
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