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Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

ROHM announced the availability of a new lineup of high power wide terminal thick-film chip resistors ideal for current detection in a variety of…


Technical Articles Jan 09, 2019 by ROHM
Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR

Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR


News Jan 03, 2019 by Paul Shepard
Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…


Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process

Vertical Ga2O3 Power FET Produced with Low-Cost, Highly-Manufacturable Ion Implantation Doping Process


News Dec 13, 2018 by Paul Shepard
High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market

High-Voltage GaN Helps Inergy Disrupt the Solar Power Generator Market


News Dec 04, 2018 by Paul Shepard
TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform

TowerJazz and KERI Prototyping SiC FET Gate Driver IC on 0.18um SOI Platform


News Dec 03, 2018 by Paul Shepard
UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering

UnitedSiC Adds Kelvin Connection Packages into SiC FET Offering


News Dec 03, 2018 by Paul Shepard
UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs


Hermetic, High-Voltage Cascode GaN Power FETs

Hermetic, High-Voltage Cascode GaN Power FETs

High Bs Ferrite Material for High Power Application

High Bs Ferrite Material for High Power Application

There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…


3-5 Power Electronics Secures New Financing for High-Voltage GaAs

3-5 Power Electronics Secures New Financing for High-Voltage GaAs


News Nov 14, 2018 by Paul Shepard
High Power GaN Solutions for Server and Automotive Applications

High Power GaN Solutions for Server and Automotive Applications

98.5%-Efficient High-Voltage BLDC Motor Driver IC Family

98.5%-Efficient High-Voltage BLDC Motor Driver IC Family

Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.


Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.


TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices

STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices


News Sep 24, 2018 by Paul Shepard
650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs