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Freebird and EPC partner on Rad-Hard GaN Power Conversion

Freebird and EPC partner on Rad-Hard GaN Power Conversion

News Apr 13, 2016 by Jeff Shepard
GaN RF Devices Demonstrate Reliability in Space Environments

GaN RF Devices Demonstrate Reliability in Space Environments

News Apr 13, 2016 by Jeff Shepard
Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters

Opto-Isolated IGBT Gate Pre-Driver IC for In-Vehicle Inverters

new products Apr 13, 2016 by Power Pulse1595211359
IC supports USB Power Delivery 2.0 and 3.0 Specifications

IC supports USB Power Delivery 2.0 and 3.0 Specifications

new products Apr 13, 2016 by Jeff Shepard
Dimmable LED Driver IC with 650V MOSFET and PFC

Dimmable LED Driver IC with 650V MOSFET and PFC

new products Apr 12, 2016 by Jeff Shepard
Gallium Nitride to Supplant Silicon in Integrated Circuits

Gallium Nitride to Supplant Silicon in Integrated Circuits

News Apr 07, 2016 by Jeff Shepard
$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

News Apr 05, 2016 by Jeff Shepard
Programmable Mixed-signal IC adds Asynchronous State Machine

Programmable Mixed-signal IC adds Asynchronous State Machine

new products Apr 04, 2016 by Jeff Shepard
The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…

Technical Articles Apr 01, 2016 by Peter Friedrichs
15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards

News Mar 30, 2016 by Jeff Shepard
Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

new products Mar 29, 2016 by Jeff Shepard
Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

News Mar 24, 2016 by Power Pulse1595211359
Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…

Technical Articles Mar 23, 2016 by AV Stavtsev
650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

new products Mar 23, 2016 by Power Pulse1595211359
Current-Sense Chip Resistor rated for 1.5W

Current-Sense Chip Resistor rated for 1.5W

new products Mar 17, 2016 by Jeff Shepard
Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

News Mar 16, 2016 by Power Pulse1595211359
Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

News Mar 15, 2016 by Power Pulse1595211359
17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability

News Mar 15, 2016 by Jeff Shepard
1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC

new products Mar 15, 2016 by Power Pulse1595211359
€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

News Mar 13, 2016 by Jeff Shepard