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60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz


News Aug 23, 2017 by Paul Shepard
200 V Gallium Nitride Power Transistor

200 V Gallium Nitride Power Transistor

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…


new products Aug 23, 2017 by EPC
3W 2817-Size Ceramic Chip Resistors Support 1A to 30A Designs

3W 2817-Size Ceramic Chip Resistors Support 1A to 30A Designs

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.


Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN


News Aug 15, 2017 by Paul Shepard
Current Sensor IC with Dual User-Settable Over-Current Fault Outputs

Current Sensor IC with Dual User-Settable Over-Current Fault Outputs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability


News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.


News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer


News Aug 07, 2017 by Paul Shepard
2-to-3-Cell Ultra-Small Li-Ion Battery Protection IC

2-to-3-Cell Ultra-Small Li-Ion Battery Protection IC

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si


News Jul 31, 2017 by Paul Shepard
MEMS Capacitive Accelerometer and LCCJCC Chip Offerings Expanded for Automotive Testing

MEMS Capacitive Accelerometer and LCCJCC Chip Offerings Expanded for Automotive Testing

The 100% veteran owned and U.S.-based Silicon Designs, Inc. industry experts in the design, development and manufacture of highly rugged…


0805-Sized Ceramic Chip Inductors Provide Highest Q

0805-Sized Ceramic Chip Inductors Provide Highest Q

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth


News Jul 24, 2017 by Paul Shepard
PFC+LLC Resonance Control IC Reduces Standby Power

PFC+LLC Resonance Control IC Reduces Standby Power

BMW i Ventures makes Strategic Investment in GaN Systems

BMW i Ventures makes Strategic Investment in GaN Systems


News Jul 19, 2017 by Paul Shepard
Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.