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600V GaAs Power Devices Unveiled at PCIM Europe

600V GaAs Power Devices Unveiled at PCIM Europe

Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

HY-LINE now offering Transphorm 600V GaN Devices in Europe

HY-LINE now offering Transphorm 600V GaN Devices in Europe


News May 20, 2014 by Jeff Shepard
Major GaN Developments at PCIM

Major GaN Developments at PCIM

EPC Intros Plug-and-Play 97% Efficient Half-Bridge Converter DrGaNPLUS EVB

EPC Intros Plug-and-Play 97% Efficient Half-Bridge Converter DrGaNPLUS EVB

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

ChiP-based DCM Converter Modules Deliver up to 1244 W/in3

Toshiba Extends DTMOS IV Super Junction Power MOSFET Family to 650V

Toshiba Extends DTMOS IV Super Junction Power MOSFET Family to 650V

Backup Power Controller and Supercap Charger/Monitor IC

Backup Power Controller and Supercap Charger/Monitor IC

Akros Silicon Names Fred Greenfeld as Director of Applications

Akros Silicon Names Fred Greenfeld as Director of Applications


News May 18, 2014 by Jeff Shepard
All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

Mitsubishi  showing Hybrid SiC Power Modules at PCIM

Mitsubishi showing Hybrid SiC Power Modules at PCIM

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment


News May 13, 2014 by Jeff Shepard
1.2KV SiC MOSFET in a MiniBLOC SOT-227

1.2KV SiC MOSFET in a MiniBLOC SOT-227

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

Discrete 650V SiC Rectifiers rated for 20A and 50A

Discrete 650V SiC Rectifiers rated for 20A and 50A

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning

IR Makes Major Technical Contribution to PCIM Europe

IR Makes Major Technical Contribution to PCIM Europe

EPC to Present Multiple Papers on GaN Technology at PCIM 2014

EPC to Present Multiple Papers on GaN Technology at PCIM 2014

150-V N-Channel FET in Thermally-Enhanced PowerPAK SC-70 Package

150-V N-Channel FET in Thermally-Enhanced PowerPAK SC-70 Package