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High-Voltage 16-Cell Li-ion Monitoring IC

High-Voltage 16-Cell Li-ion Monitoring IC

Performance Comparisons of SiC Transistors GaN Cascodes and Si  Coolmos in SMPS

Performance Comparisons of SiC Transistors GaN Cascodes and Si Coolmos in SMPS

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.


Using Normally on JFETs in Power Systems

Using Normally on JFETs in Power Systems

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC enhancement devices.


$20 Million offered to Develop Next-Generation Electric Machines

$20 Million offered to Develop Next-Generation Electric Machines


News Mar 19, 2015 by Jeff Shepard
600V GaN Transistor in TO-247

600V GaN Transistor in TO-247

Webbased Simulation Tool to Simplify IGBT Selection and Thermal Design in Minutes

Webbased Simulation Tool to Simplify IGBT Selection and Thermal Design in Minutes

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International Rectifier's website.


Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

20-V Chipscale FET targets Ultraportables

20-V Chipscale FET targets Ultraportables

80% Smaller PV Inverters Cost 15% Less

80% Smaller PV Inverters Cost 15% Less


News Mar 17, 2015 by Jeff Shepard
Muxcapacitor PSSoC Tech Claims 95% AC-DC Efficiencies

Muxcapacitor PSSoC Tech Claims 95% AC-DC Efficiencies


News Mar 17, 2015 by Jeff Shepard
GaN Transistors rated for 600V handle up to 15A

GaN Transistors rated for 600V handle up to 15A

GaN enables 96.7% Efficient 500-Watt Eighth-Brick

GaN enables 96.7% Efficient 500-Watt Eighth-Brick


News Mar 16, 2015 by Jeff Shepard
GaN Power Switches with Topside Cooling Simplify PCB Design

GaN Power Switches with Topside Cooling Simplify PCB Design

1200V/1700V Dual-IGBT Drivers with More Protection Features

1200V/1700V Dual-IGBT Drivers with More Protection Features

Rogowski Probes Measure Power SiC and GaN Switch Currents

Rogowski Probes Measure Power SiC and GaN Switch Currents

Transphorm and ON Semiconductor Co-Branding GaN Power Devices

Transphorm and ON Semiconductor Co-Branding GaN Power Devices


News Mar 15, 2015 by Jeff Shepard
Boost Your System Defining the Future of IGBT HighPower Modules

Boost Your System Defining the Future of IGBT HighPower Modules

This article provides insight into the development of this new flexible high-power platform and demonstrates how Infineon’s approach.


A High Current Low Inductance Wide Bandgap Power Module for High Performance Motor Drive Applications

A High Current Low Inductance Wide Bandgap Power Module for High Performance Motor Drive Applications

This article presented HT-3000, a high-performance power module that takes full advantage of the benefits of wideband gap devices.


TI and EPC Partner on 80-V Half-Bridge GaN FET Module

TI and EPC Partner on 80-V Half-Bridge GaN FET Module

EPC Publishes Wireless Power Handbook

EPC Publishes Wireless Power Handbook


News Mar 11, 2015 by Jeff Shepard