Efficient Power Conversion Corporation announced the publication of a practical engineering handbook designed to provide…
Efficient Power Conversion Corporation announced the publication of a practical engineering handbook designed to provide power system design…
Mersen has accepted Google’s “Little Box Challenge” to design a power inverter that is about 10 times smaller than…
Mersen has accepted Google’s “Little Box Challenge” to design a power inverter that is about 10 times smaller than what is available today.
SEMIKRON Foundation and ECPE honour Mr. Otto Kreutzer and Mr. Alexander Wirth just as Mr. Mickey Madsen with the…
SEMIKRON Foundation and ECPE honour Mr. Otto Kreutzer and Mr. Alexander Wirth just as Mr. Mickey Madsen with the Innovation Award 2015 and Mr.…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with…
ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V.
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling…
GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, announced topside cooling technology in its wide range of…
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
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