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The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards


News Mar 30, 2016 by Jeff Shepard
Precision Enhancement Mode MOSFET Arrays

Precision Enhancement Mode MOSFET Arrays

Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

ams Releases PDK for its 0.35µm Analog Specialty Processes

ams Releases PDK for its 0.35µm Analog Specialty Processes


News Mar 22, 2016 by Jeff Shepard
1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

Multiple Seminars and Demos by ON Semi at APEC

Multiple Seminars and Demos by ON Semi at APEC

GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army


News Mar 17, 2016 by Jeff Shepard
Current-Sense Chip Resistor rated for 1.5W

Current-Sense Chip Resistor rated for 1.5W

Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

Noise Cancellation Speaker Driver targets Mass Market

Noise Cancellation Speaker Driver targets Mass Market

Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability


News Mar 15, 2016 by Jeff Shepard
Copack IGBT and Diode in the ISO247 Package

Copack IGBT and Diode in the ISO247 Package

1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC