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Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”  While silicon carbide devices


tech insights Jun 06, 2016 by Greg Evans
GaN Device claims Highest Efficiency at Highest Frequency

GaN Device claims Highest Efficiency at Highest Frequency

Metal Composite High-Current Chip Inductors

Metal Composite High-Current Chip Inductors

Design Methodology for First Pass Success: A rationale for hardware simulation

Design Methodology for First Pass Success: A rationale for hardware simulation

This article highlights the importance of modelling and simulation task in design methodology to reduce the number of design iterations and acquire…


Industry’s Highest Current 40A 16-VIN Converter Released

Industry’s Highest Current 40A 16-VIN Converter Released

Texas Instruments introduced the industry’s first 40-A, 16-VIN synchronous step-down DC/DC converter with true differential remote-voltage sensing


150mA Linear LED Driver with Push-Button Input

150mA Linear LED Driver with Push-Button Input

High Current Power MOSFET with Current Mirror and Temperature Sense Diodes

High Current Power MOSFET with Current Mirror and Temperature Sense Diodes

This article discusses the advantages of IXYS' MMIXT132N50P3 with current mirror to monitor the drain current and its various applications.


Recent Advancements in IGCT Technologies for High-Power Electronics Applications

Recent Advancements in IGCT Technologies for High-Power Electronics Applications

This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…


Simplify Power Electronics Design with GaN Power ICs

Simplify Power Electronics Design with GaN Power ICs

This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.


Overcoming Challenges in Driving Silicon Carbide Power Modules

Overcoming Challenges in Driving Silicon Carbide Power Modules

This article discusses the advancements of AgileSwitch in Programmable Gate Drivers.


SIC FETs enable Cure for EV Range Anxiety

SIC FETs enable Cure for EV Range Anxiety


News May 30, 2016 by Jeff Shepard
Buffalo to Investigate GaO Ultra-Wide Bandgap Semis

Buffalo to Investigate GaO Ultra-Wide Bandgap Semis


News May 30, 2016 by Jeff Shepard
2020 Vision: Key Trends in Power and Energy Management

2020 Vision: Key Trends in Power and Energy Management

This article discusses the key trends in power and energy management and offers a vision into 2020.


No Need for External Sensors in New Inverters

No Need for External Sensors in New Inverters

This article introduces IC integration to allow PCB based sensor solutions for the reduction of cost and footprint of power converters.


1.7kV IGBT Modules rated for 75A to 600A

1.7kV IGBT Modules rated for 75A to 600A

GaN RF Power Transistors for Cellular Base Stations

GaN RF Power Transistors for Cellular Base Stations

CIPS 2016 - Power Electronics in Challenging Little Boxes and More

CIPS 2016 - Power Electronics in Challenging Little Boxes and More

This article discusses methods on solving challenges in power electronics and suggests methods to improve performance of power electronics…


Richardson RFPD Announces Agreement with GaN Systems

Richardson RFPD Announces Agreement with GaN Systems


News May 24, 2016 by Jeff Shepard
Intersil GaN Developments include EPC Collaboration

Intersil GaN Developments include EPC Collaboration


News May 24, 2016 by Jeff Shepard
Evince gets Funding to Develop Diamond Semis

Evince gets Funding to Develop Diamond Semis


News May 24, 2016 by Jeff Shepard