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GaN Enables Wireless Power Modules to Replace Connectors

GaN Enables Wireless Power Modules to Replace Connectors

20 Most-Read Material Developments Stories for 2016: 10-1

20 Most-Read Material Developments Stories for 2016: 10-1

50 Most-Read New Product Stories for 2016: 40-31

50 Most-Read New Product Stories for 2016: 40-31

50 Most-Read Industry News Stories for 2016: 40-31

50 Most-Read Industry News Stories for 2016: 40-31

20 Most-Read Asian Product Announcements for 2016: 20-11

20 Most-Read Asian Product Announcements for 2016: 20-11

Dual-Die Hall Sensor IC for Safety-Critical Applications

Dual-Die Hall Sensor IC for Safety-Critical Applications

EPC to Show Applications Enabled by GaN at CES

EPC to Show Applications Enabled by GaN at CES

20 Most-Read Material Developments Stories for 2016: 20-11

20 Most-Read Material Developments Stories for 2016: 20-11

Infineon Technologies - Readers’ Choice Company of the Year

Infineon Technologies - Readers’ Choice Company of the Year

50 Most-Read New Product Stories for 2016: 50-41

50 Most-Read New Product Stories for 2016: 50-41

50 Most-Read Industry News Stories for 2016: 50-41

50 Most-Read Industry News Stories for 2016: 50-41

200µm-Thick Thermal Material for IGBT Modules

200µm-Thick Thermal Material for IGBT Modules

Choice between Si, SiC and GaN Growing in Complexity

Choice between Si, SiC and GaN Growing in Complexity


News Dec 21, 2016 by Jeff Shepard
IEEE Energy Conversion Congress and ExpoECCE 2016

IEEE Energy Conversion Congress and ExpoECCE 2016

ECCE, the foremost IEEE conference in the field of electrical and electromechanical energy conversion provided an international audience the…


tech insights Dec 21, 2016 by Gary Dolny
System Level Impact of GaN in Server Architectures

System Level Impact of GaN in Server Architectures


News Dec 20, 2016 by Jeff Shepard
400V Vertical GaN Transistor Switches 15A in 40ns

400V Vertical GaN Transistor Switches 15A in 40ns


News Dec 19, 2016 by Jeff Shepard
MACOM Announces Preliminary Injunction against Infineon

MACOM Announces Preliminary Injunction against Infineon


News Dec 19, 2016 by Jeff Shepard
SiC Technology Introduced into Formula E

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.


new products Dec 19, 2016 by ROHM
The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.


Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key

Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key


News Dec 15, 2016 by Jeff Shepard