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TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…


new products Oct 30, 2018 by GaN Systems
II-VI Inc. and Sumitomo Electric Device Innovations Partner for GaN-on-SiC HEMTs

II-VI Inc. and Sumitomo Electric Device Innovations Partner for GaN-on-SiC HEMTs


News Oct 29, 2018 by Paul Shepard
Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

ON Semiconductor Reports Strong Performance in Third Quarter 2018

ON Semiconductor Reports Strong Performance in Third Quarter 2018


News Oct 28, 2018 by Paul Shepard
SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

Diamond Transistors Proposed for use in Spacecraft and Car Engines

Diamond Transistors Proposed for use in Spacecraft and Car Engines


News Oct 26, 2018 by Paul Shepard
Power Capacitors Toughen Up for Life with Wide Band Gap Semiconductors

Power Capacitors Toughen Up for Life with Wide Band Gap Semiconductors

This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…


AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion


News Oct 25, 2018 by Paul Shepard
175kVA SiC Converters in the New Dragon 2 Locomotive

175kVA SiC Converters in the New Dragon 2 Locomotive


News Oct 24, 2018 by Paul Shepard
Jaguar I-PACE: Double-Sided Sintered IGBT Modules for Top-Class Electric Performance

Jaguar I-PACE: Double-Sided Sintered IGBT Modules for Top-Class Electric Performance


News Oct 22, 2018 by Paul Shepard
MagnaChip to Begin Production of 1440-Channel Automotive Display Driver IC

MagnaChip to Begin Production of 1440-Channel Automotive Display Driver IC


News Oct 22, 2018 by Paul Shepard
SiC & Novel Magnetics Enable 97% Efficient 120kW Wireless Charging for EVs

SiC & Novel Magnetics Enable 97% Efficient 120kW Wireless Charging for EVs


News Oct 22, 2018 by Paul Shepard
GaN-Based Interleaved CCM Totem Pole Bridgeless PFC Reference Design

GaN-Based Interleaved CCM Totem Pole Bridgeless PFC Reference Design


News Oct 19, 2018 by Paul Shepard
Addressing the Challenges of Utilizing IGBT Technology in Power Modules

Addressing the Challenges of Utilizing IGBT Technology in Power Modules

This article features Vincotech GmbH IGBTs in power modules as it getting thinner, smaller, and faster that complicates their installation in…


Gen-3 SiC JFETs with 1200V and 650V Options

Gen-3 SiC JFETs with 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…


Authenticator IC with SHA3-256 Cryptographic Engine for Embedded Systems

Authenticator IC with SHA3-256 Cryptographic Engine for Embedded Systems

Controlling Organic Semiconductor Band Gaps by Electron-Acceptor Fluorination

Controlling Organic Semiconductor Band Gaps by Electron-Acceptor Fluorination


News Oct 17, 2018 by Paul Shepard