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GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

1350V, 20A IGBT with Integrated Gate Driver Targets Induction Heating Designs

1350V, 20A IGBT with Integrated Gate Driver Targets Induction Heating Designs

Cree Agrees to Supply STMicroelectronics with SiC Wafers

Cree Agrees to Supply STMicroelectronics with SiC Wafers


News Jan 08, 2019 by Scott McMahan
GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion

GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion


News Jan 07, 2019 by Paul Shepard
ECPE Announces Workshops and Events for 2019

ECPE Announces Workshops and Events for 2019

ECPE recently released the program for its upcoming workshop 'New Technologies for Medium-Frequency Solid-State Transformers' taking…


tech insights Jan 07, 2019 by ECPE
Ultra-Low Power Transistors Shown to Be Possible with Unique Material

Ultra-Low Power Transistors Shown to Be Possible with Unique Material


News Jan 04, 2019 by Paul Shepard
Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR

Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR


News Jan 03, 2019 by Paul Shepard
Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…


Schurter Announces UAI 1206 a Chip Fuse for High Demands

Schurter Announces UAI 1206 a Chip Fuse for High Demands

With the UAI 1206, SCHURTER offers a pulse and temperature resistant chip fuse with slow release characteristics for applications in which aging…


Power Control at 27 MHz with Variable Reactance

Power Control at 27 MHz with Variable Reactance

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads


Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process

Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process


News Dec 21, 2018 by Paul Shepard
Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…


Third-Generation 0.18-Micron Bipolar-CMOS-DMOS Process Technology

Third-Generation 0.18-Micron Bipolar-CMOS-DMOS Process Technology


News Dec 20, 2018 by Paul Shepard
Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Assessing the Promise of Gallium Oxide Power Devices

Assessing the Promise of Gallium Oxide Power Devices


News Dec 20, 2018 by Paul Shepard
Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Maximizing System Efficiency with IGBT Modules

Maximizing System Efficiency with IGBT Modules

With the recent push from both the wider industry sectors and the government for high-efficiency systems, the semiconductor industry is responding…


GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

ASIL-Certified BLDC System Basis MOSFET Driver

ASIL-Certified BLDC System Basis MOSFET Driver

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems