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650V / 72mΩ GaN FETs in a PQFN88 Package

650V / 72mΩ GaN FETs in a PQFN88 Package

FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car

FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car


News Sep 14, 2019 by Paul Shepard
Low-Cost Version of 600V Half-Bridge Driver IC

Low-Cost Version of 600V Half-Bridge Driver IC

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board


News Sep 12, 2019 by Paul Shepard
Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half

Delphi and Cree Partner on 800V SiC Inverter to Cut EV Charging Time in Half


News Sep 11, 2019 by Paul Shepard
RIGOL Introduces New “Possibilities and More” Brand Identity

RIGOL Introduces New “Possibilities and More” Brand Identity

This article features RIGOL Technologies launch of its redesigned brand identity system as well as the 3rd generation brand tagline…


new products Sep 11, 2019 by RIGOL
HCL Technologies Acquires Sankalp Semiconductor

HCL Technologies Acquires Sankalp Semiconductor


News Sep 10, 2019 by Paul Shepard
DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron

DuPont Electronics & Imaging Divests SiC Wafer Business to SK Siltron


News Sep 10, 2019 by Paul Shepard
Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in-a-PDFN56 Dual Package

Taiwan Semiconductor Introduces Dual N-Channel Power MOSFET in a PDFN56 Dual Package.


STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi for High-Speed Battery Charging in Next-Generation Electric Vehicles

This article highlights STMicroelectronics to Supply Advanced Silicon-Carbide Power Electronics to Renault-Nissan-Mitsubishi (Alliance) for battery…


STMicroelectronics to Supply Advanced SiC Power Electronics to Renault-Nissan-Mitsubishi for HighSpeed Battery Charging in EVs

STMicroelectronics to Supply Advanced SiC Power Electronics to Renault-Nissan-Mitsubishi for HighSpeed Battery Charging in EVs

STMicroelectronics has been chosen to supply high-efficiency silicon-carbide power electronics to Renault-Nissan-Mitsubishi for advanced on-board…


Delphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices

Delphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices

This article features Delphi Technologies and Cree, Inc. partnership to utilize SiC semiconductor device technology to enable powerful electronic…


new products Sep 09, 2019 by Cree
A Gate Driving Design Guide for CoolSiC MOSFETs

A Gate Driving Design Guide for CoolSiC MOSFETs

This article highlights Infineon Technologies CoolSiC MOSFET device with its gate-drive designs advantages against MOSFET parasitic turn-ON effect.


Renault-Nissan-Mitsubishi to use STMicro SiC for High-Speed EV Battery Charging

Renault-Nissan-Mitsubishi to use STMicro SiC for High-Speed EV Battery Charging


News Sep 08, 2019 by Paul Shepard
Insulation Technique May Pave the Way for More Powerful and Smaller Chips

Insulation Technique May Pave the Way for More Powerful and Smaller Chips


News Sep 06, 2019 by Paul Shepard
GaNPower International Announces New 1200V GaN Power Switch with Kevin Source Lead

GaNPower International Announces New 1200V GaN Power Switch with Kevin Source Lead

This article highlights GaNPower International for the release of a high performance 1200V GaN power switching device (product code GPIHV30DDP5L).


The Next Generation of SiC Power Modules

The Next Generation of SiC Power Modules

This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…


GaN-Based 110W LED Drivers Claim Industry-Leading Power Density and Efficiency

GaN-Based 110W LED Drivers Claim Industry-Leading Power Density and Efficiency

EPC and Solace Power Partner to Use GaN FETs in 250-W Wireless Power Platforms

EPC and Solace Power Partner to Use GaN FETs in 250-W Wireless Power Platforms


News Sep 04, 2019 by Paul Shepard
New Theory Models the Nature of Silicon-Carbide Crystal Defects

New Theory Models the Nature of Silicon-Carbide Crystal Defects


News Sep 03, 2019 by Paul Shepard