This article highlights Infineon Technologies CoolSiC MOSFET device with its gate-drive designs advantages against MOSFET parasitic turn-ON effect.
This article highlights Infineon Technologies CoolSiC MOSFET device with its gate-drive designs advantages against MOSFET parasitic turn-ON effect.
This article highlights GaNPower International for the release of a high performance 1200V GaN power switching device…
This article highlights GaNPower International for the release of a high performance 1200V GaN power switching device (product code GPIHV30DDP5L).
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power…
This article features Mitsubishi Electric SiC power modules as next big step in modern power electronics for high-power converters with high…
This article highlights Infineon launched of two new EasyPACK modules of the 1200 V family that both Easy 1B and Easy 2B,…
This article highlights Infineon launched of two new EasyPACK modules of the 1200 V family that both Easy 1B and Easy 2B, integrate CoolSiC™…
This article discusses the collaboration of EPC with Solace Power to incorporate highly efficient, low cost eGan FETs for…
This article discusses the collaboration of EPC with Solace Power to incorporate highly efficient, low cost eGan FETs for its upcoming 250-Watt…
This article highlights ROHM announcement of the availability of a buck-boost DC/DC converter with integrated MOSFET for…
This article highlights ROHM announcement of the availability of a buck-boost DC/DC converter with integrated MOSFET for portable devices, the…