ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities