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STMicroelectronics’ New Isolated Gate Driver is Aimed At SiC MOSFETS

STMicroelectronics’ New Isolated Gate Driver is Aimed At SiC MOSFETS

The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V


E-Peas is Helping Enable Epishine’s New, Novel and Thin Indoor Energy Harvesting Solution

E-Peas is Helping Enable Epishine’s New, Novel and Thin Indoor Energy Harvesting Solution

The world is getting smarter, and the devices that enable that intelligence are getting smaller. For this to continue, especially in indoor…


Diodes Inc. Releases 5.5V, 3A, Synchronous COT Buck Converter

Diodes Inc. Releases 5.5V, 3A, Synchronous COT Buck Converter

This article highlights Diodes Incorporated AP61300/AP61302 that is a 3A, synchronous buck converter with a wide input voltage range of 2.4V to 5.5V


APEC Organizers Announce Virtual Conference Format

APEC Organizers Announce Virtual Conference Format

The Applied Power Electronics Conference will take place as a virtual conference from June 14 through June 17.


News Apr 01, 2021 by Hailey Stewart
X-Fab Partners with IHP on BiCMOS Technology

X-Fab Partners with IHP on BiCMOS Technology

X-FAB Silicon Foundries and the Leibniz Institute for High-Performance Microelectronics (IHP) have announced the start of a new partnership last week.


The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…


EPC Debuts A Demonstration Board Featuring eGaN FETS Driving Laser Diodes

EPC Debuts A Demonstration Board Featuring eGaN FETS Driving Laser Diodes

Efficient Power Conversion’s 200V EPC9150 generates 220 amp, 2.9 ns wide current pulses for automotive LIDAR systems


Researchers Enhance Non-Destructive Carrier Lifetime Measurements in SiCs

Researchers Enhance Non-Destructive Carrier Lifetime Measurements in SiCs

A research team led by Associate Professor Masashi Kato from the Nagoya Institute of Technology has improved one of the known non-destructive…


News Mar 24, 2021 by Nicholas St. John
Magnachip Unveils LDO Linear Regulator Featuring Ultra-Fast Transient Response for UFS-Based Multi-Chip Packages

Magnachip Unveils LDO Linear Regulator Featuring Ultra-Fast Transient Response for UFS-Based Multi-Chip Packages

This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…


EPC Expands eToF Laser Driver IC Family with Device Optimized for Augmented Reality

EPC Expands eToF Laser Driver IC Family with Device Optimized for Augmented Reality

This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…


AOS Announces AlphaZBL AC-DC Active Bridge Rectifier Solutions

AOS Announces AlphaZBL AC-DC Active Bridge Rectifier Solutions

This article highlights AOS active AC-DC bridge rectifiers. Aptly trademarked AlphaZBL™ for “zero bridge loss,” this new family of products…


Transphorm Tailors Power Devices to Crypto Mining Applications

Transphorm Tailors Power Devices to Crypto Mining Applications

Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio is compatible with…


Alpha and Omega Semiconductor Debuts a 1200V SiC MOSFET for EVs

Alpha and Omega Semiconductor Debuts a 1200V SiC MOSFET for EVs

The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage


Utilizing GaN with High-Performance Gate Driving

Utilizing GaN with High-Performance Gate Driving

This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.


Bourns Announces 1210-Size Automotive Grade Common Mode Chip Inductors

Bourns Announces 1210-Size Automotive Grade Common Mode Chip Inductors

Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.


UnitedSiC Launches a New FET-Jet Calculator

UnitedSiC Launches a New FET-Jet Calculator

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…


Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…


GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications


Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…


ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.