This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…
This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…
This article highlights AOS active AC-DC bridge rectifiers. Aptly trademarked AlphaZBL™ for “zero bridge loss,”…
This article highlights AOS active AC-DC bridge rectifiers. Aptly trademarked AlphaZBL™ for “zero bridge loss,” this new family of products…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio…
Gallium nitride (GaN) power conversion products manufacturer Transphorm has recently announced that its device portfolio is compatible with…
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates…
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
This article discusses the challenges that thermal management raises due to increased power density, especially with…
This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.
A look into the latest quarterly and full-year earnings results from the power electronics companies.
A look into the latest quarterly and full-year earnings results from the power electronics companies.
Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).
Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source…
This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology,…
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a…
Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.
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