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UnitedSiC Launches a New FET-Jet Calculator

UnitedSiC Launches a New FET-Jet Calculator

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…


Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

Isolated Gate Driver from STMicroelectronics Safely Controls Silicon-Carbide MOSFETs

This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…


GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

GaN Systems and Silanna Semiconductor Release ACF Charger Reference Design

The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications


Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

Tower Semiconductor Introduces a Newly Developed, State-of-the-art Galvanic Isolation Technology

This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…


ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

ON Semiconductor Expands Its Line Of 650V SiC MOSFETs

The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.


Understanding Thermal Management of Chip-Scale GaN Devices

Understanding Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increased power density, especially with chip-scale-packaging (CSP).


ON Semiconductor launches World’s First Automotive Qualified SiPM  Array Product for LiDAR Applications

ON Semiconductor launches World’s First Automotive Qualified SiPM Array Product for LiDAR Applications

This article highlights ON Semiconductor ArrayRDM0112A20-QFN as the first automotive qualified SiPM product in the market.


GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

GeneSiC Semiconductor’s 1200V G3R SiC MOSFETs Offer RDS(ON)s as Low as 20mΩ

The new series offers industry-leading efficiencies, switching speeds, power density all with low EMI emission.


Power Companies Close Out 2020 with Growth and New Opportunities

Power Companies Close Out 2020 with Growth and New Opportunities

A look into the latest quarterly and full-year earnings results from the power electronics companies.


News Mar 10, 2021 by Shannon Cuthrell
Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Incorporates New Technology into Wolfspeed’s Wolfpack Series

Silicon Labs Boosts Wolfspeed’s Power Modules to accelerate fast-charging development for electric vehicles (EVs).


Eliminating EMC at the Source

Eliminating EMC at the Source

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.


Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

Richardson RFPD Announces Availability of Wolfspeed’s New 120 mΩ, 650 V SiC MOSFETs

This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…


Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s CoolGaN Delivers Efficiency and Reliability to Telecom Power Applications

Infineon’s GaN devices are qualified according to JEDEC standards, offering lifetimes beyond 15 years, and are a perfect fit for industrial…


Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

Allegro Debuts Sensor Interface IC for Resistive Bridge Pressure Sensors

The automotive grade A17700 interfaces directly with Wheatstone bridge transducers and enables highly accurate measurements.


Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices Receives $9.5 Million in Series A Funding

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.


News Mar 04, 2021 by Stephanie Leonida
3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

3D Bond Wire Modelling and Electro-Magnetic Simulation Accelerates IGBT Module Development

This article introduces software MFis Wire and its advantages in significantly shortening time for creating complex 3D geometry models of bond wire…


Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

Keysight and Transphorm Unveil A Reference Design For GaN-Based Switched Mode Power Supplies

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…


Nexperia Announces Increase in R&D and Global Production Spending

Nexperia Announces Increase in R&D and Global Production Spending

The Dutch semiconductor manufacturer announced plans to increase its investment in R&D and production capacity in 2021.


News Mar 02, 2021 by Shannon Cuthrell
Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

Vishay Intertechnology Unveils Ten New Silicon Carbide Schottky Diodes

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications


Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba’s SiC MOSFET Module Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…