Toshiba Intros SOI Process for 5G RF Switches and Low-Noise Amplifiers
Toshiba Electronic Devices & Storage Corporation announced the development of the TaRF11, the latest generation of Toshiba’s advanced RF SOI process (TarfSOI™) optimized for RF switches and low-noise amplifiers (LNA) in mobile devices such as 5G smartphones.
In addition to smartphones, targeted applications for TaRF11 include wireless equipment such as Wi-Fi and UWB, etc.
In recent years, the performance of smartphones and other mobile devices has improved, and they have migrated to higher wireless band frequencies. Generally, the higher the frequency, the greater the signal loss between the antenna and the receiving circuit, driving a need for LNA with enhanced characteristics that improve received signal quality by compensating for signal loss.
Toshiba’s newly developed TaRF11 process improves on the RF characteristics of TaRF10, the current generation SOI process technology. MOSFETs for LNA fabricated with TaRF11 process achieve a minimum noise figure (NF) of 0.48dB @8GHz, a 0.3dB improvement over TaRF10. Like the TaRF10, the TaRF11 process allows the LNA, RF switch, and control circuit to be fabricated on a single chip.
Toshiba has developed RF ICs, utilizing the fab of its subsidiary, Japan Semiconductor Corporation to apply the latest SOI-CMOS technology. By handling all aspects of the production flow, from RF process technology development to design and manufacturing, Toshiba secures a rapid products launch.
Toshiba will continue to advance its cutting-edge TarfSOI™ process technology, toward securing further performance improvements and to provide RF-switch and LNA ICs for Wi-Fi equipment; for 5G smartphones, which are scheduled to expand from the 5GHz to the 7GHz band; and for Ultra Wide Band applications that use the 7GHz to 10GHz frequencies.
- Outstanding noise figure:
- NF=0.48dB (min) @8GHz (Improved by about 0.3dB compared to TaRF10)
- An LNA, RF switch and control circuit can be manufactured on a single chip.
- Integrated development of the latest semiconductor processes and product development enables the early launch of high-frequency switch products