Zetex plc (Chadderton, Oldham) announced its new ZXMHC6A07T8 H-bridge MOSFET, which comes in a 7.3mm x 6.7mm SM8 package and is capable of replacing up to four discrete MOSFETs. The IC co-packages n-channel and p-channel trench MOSFETs that exhibit on-resistances of 0.3 ohms and 0.425 ohms, respectively, as well as a 60V breakdown capability, making the MOSFET easier to drive and removing the need for buffering.
The proprietary lead frame design of the SM8 package provides a thermal resistance of 56°C/W that allows for cool running and results to a power dissipation of 2.25W, as well as an output current of up to 2.2A.
