WLCSP MOSFETs claim New Benchmark in RDSon

NXP Semiconductors has released six new small-signal MOSFETs in tiny Wafer Level Chip-Size Package (WLCSP) delivering unprecedented low RDSon performance per PCB space. These P-Channel and N-Channel MOSFETs with low RDSon down to 15 mΩ are designed for mobile and space-constraint application where size and high efficiency are key. The new MOSFETs are available in WLCSP4 and WLCSP6 with a compact size of 0.78 x 0.78 x 0.35 mm and 0.98 x 1.48 x 0.35 mm respectively and extend our broad small-signal MOSFET portfolio in small DFN and standard SMD packages.

The new devices consist of four 12 V N-Channel MOSFETs: PMCM440VNE (WLCSP4, RDSon = 57mΩ at VGS = 4.5V); PMCM4401VNE (WLCSP4, RDSon = 36mΩ at VGS = 4.5V) ; PMCM650VNE (WLCSP6, RDSon = 21mΩ at VGS = 4.5V); and PMCM6501VNE (WLCSP6, RDSon = 15mΩ at VGS = 4.5V) . And two 12 V P-Channel MOSFETs: PMCM4401VPE (WLCSP4, RDSon = 55mΩ at VGS = 4.5V); and PMCM6501VPE (WLCSP6, RDSon = 19mΩ at VGS = 4.5V)

Key features and benefits include: Low RDSon per PCB space for high energy efficiency; Very small package size (0.98 × 1.48 × 0.35 mm for 4 ball WLCSP4) (0.78 × 0.78 × 0.35 mm for 6 ball WLCSP6); ElectroStatic Discharge (ESD) protection >2 kV HBM. Key applications are expected to include Load switching for e.g. Smartphones, Battery switch, and LED drivers.