Toshiba Introduces Small Signal MOSFETS for High-Speed Switching in Portable Electronics

Toshiba America Electronic Components, Inc. (TAEC) has expanded its power semiconductor lineup with a broad selection of low ON-resistance small signal MOSFETs (S-MOS) suitable for high-speed switching devices or dc-dc converters in portable electronics equipment. The MOSFETs feature what the company claims is among the lowest ON-resistance and lowest capacitance in the industry in 2.8mm x 2.8mm and 1.6mm x 1.6mm packages and are designed to save space while meeting designers’ requirements for smaller internal power loss and lower operating voltage in medium output current range applications such as laptop PCs, cellular phones, digital cameras and audio players.

The S-MOS family includes 17 six-pin devices (SSM6K- and SSM6J-) designed for 0.5 to 2.5A load switching applications and dc-dc converters operating at 0.5 to 1MHz, and 20 three-pin devices (SSM3K- and SSM3J-) that are suitable for 0.5 to 4.0A switching devices. The six-pin devices, with ON-resistance from 30 to 400mΩ are available in an ultra-small 1.6mm x 1.6mm x 0.55mm package (ES6). The three-pin devices feature ON-resistance from 100 to 400mΩ and are offered in a 2.8mm x 2.9mm x 0.7mm package (TSM). N- and P-channel polarities are available in either package, designated by K or J, respectively, in the part number.

To support a wide range of design requirements, the six-pin S-MOS family includes N-channel devices with drain source voltage of 20 or 30V and driving voltage of 1.8, 2.5 or 4V, and P-channel devices with -12, -20 or -30V drain source voltage, and driving voltage of 1.5, 1.8, 2.5 or 4V. The three-pin S-MOS family includes N-channel devices with drain source voltage of 20, 30, or 60V, and driving voltage of 1.8, 2.5 or 4V, and P-channel devices with -12, -20 or -30V drain source voltage, and driving voltage of 1.8, 2.5 or 4V.

"Advances in miniaturization of portable equipment are increasingly driving design decisions. At Toshiba, we are working to help our customers realize low capacitance and high speed switching, with lower operating voltages and smaller power losses, which translate into longer battery operation for their designs," said Homayoun Ghani, Business Development Manager, Microwave, RF and Small-Signal Products, for TAEC.

Samples of the new Toshiba small signal MOSFETs are scheduled to be available in March 2007. These S-MOS devices range in price from $0.05 to $0.14 each in sample quantities.