Toshiba Adds Single Die MOSFET & Schottky Barrier Diode Devices For DC-DC Converters

Toshiba America Electronic Components, Inc. (TAEC) announced that the company has expanded its line-up of MOSBD™ devices, which integrate a power MOSFET and a Schottky Barrier Diode onto a single die to save board space, increase power efficiency and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode.

The two new MOSBDs are well suited for high efficiency dc-dc converter applications in notebook PCs, portable devices, and other electronics where efficient power management is required. The devices are based on U-MOS V, the fifth-generation process technology in the Toshiba fast switching series, which is said to enable lower on-state resistance for low-side MOSFETs, and faster switching for high-side MOSFETs. Each of the MOSBDs utilizes Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce on-state resistance (R_DS(ON)).

The addition of these two new MOSBDs to the current lineup provides a selection of drain current, R_DS(ON) and package to meet a range of system design requirements. The TPCA8A02-H features drain-source voltage of 30V, drain current of 34A (max.), R_DS(ON) of 4.8mΩ (typ.), and low profile SOP Advance packaging from Toshiba, which measures 5 x 6 x 0.95mm. The TPC8A03-H features drain-source voltage of 30V, drain current of 15A (max.), R_DS(ON) of 5.1mΩ (typ.), and SOP-8 packaging, which measures 5 x 6 x 1.6mm.

The 4.8mΩ (typ.) TPCA8A02-H in SOP-Advance packaging and the 5.1mΩ (typ.) TPC8A03-H MOSBD are available now, with samples priced at $0.55 and $0.50, respectively.