Toshiba Adds Family Of MOSFETs Using Advanced pi-MOS VII Process Technology For AC-DC & Ballast Applications
Toshiba America Electronic Components, Inc. (TAEC) introduced a new series of high-voltage pi-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and R(DS)(ON) ratings. The new lineup addresses market requirements for ac-dc and ballast applications, achieved through use of the company’s seventh generation pi-MOS process, a high level of cell integration and optimization of the cell design.
The first 13 devices in the pi-MOS VII series include seven 500 and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as ac adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400 to 650V and provide a wide selection of electrical characteristics, including drain current, R(DS)(ON) and gate capacitance.
"As a result of the optimization of the cell design, Toshiba has been able to reduce gate charge and capacitance without losing low R(DS)(ON) characteristics," said Jeff Lo, Business Development Manager, Discrete Power Devices, for TAEC.
Compared to the company’s previous generation pi-MOS VI MOSFETs, total gate charge has been reduced approximately 40%, output capacitance has been reduced 25%, reverse transfer capacitance has been reduced 60% and input capacitance has been reduced 10%.
The first seven 500V devices in the pi-MOS VII series provide a selection of drain current from 5 to 15A (max.), with a range of R(DS)(ON), gate charge and avalanche energy to meet various application requirements. The TK5A50D features drain current of 5A and R(DS)(ON) of 1.5Ω (max.); the 7A TK7A50D has R(DS)(ON) of 1.22omega (max.); the 8A TK8A50D has R(DS)(ON) of 0.85Ω (max.); the 10A TK10A50D has R(DS)(ON) of 0.72Ω (max.); the 12A TK12A50D has R(DS)(ON) of 0.52Ω (max.); the 13A TK13A50D has R(DS)(ON) of 0.47Ω (max.); and the 15A TK15A50D has R(DS)(ON) of 0.3Ω (max.). These devices are packaged in Toshiba TO-220SIS packages, which are equivalent to industry standard TO-220F (isolated) packages, with dimensions of 10.0 x 4.5 x 17.8mm.
The initial pi-MOS VII series includes six 600V devices with drain current ranging from 3.5 to 13A (max.). A 3.5A device, the TK4A60DA, has R(DS)(ON) of 2.2omega (max.); the 6A TK6A60D has R(DS)(ON) of 1.25Ω (max.); the 7.5A TK8A60DA has R(DS)(ON) of 1.0Ω (max.); the 10A TK10A60D has R(DS)(ON) of 0.75Ω (max.), the 11A TK11A60D has R(DS)(ON) of 0.65Ω (max.); and the 13A TK13A60D has R(DS)(ON) of 0.43Ω (max.).
The new Toshiba pi-MOS VII high-voltage MOSFETs are available now. Prices in sample quantities start at $0.75.
