New Industry Products

TAEC Unveils TK15A60S Deep Trench Power MOSFET

March 27, 2005 by Jeff Shepard

Toshiba America Electronic Components Inc. (TAEC, Japan and Irvine, CA) and its parent company Toshiba Corp. (Toshiba) announced a new power MOSFET, the Deep Trench MOSFET (DTMOS), which employs a new super junction structure that enables a reduction in power consumption caused by on-state resistance (RDSON) to approximately 40% of the value typically achieved with conventional MOSFETs. The first device in the DTMOS family, the TK15A60S, is targeted for use in power supplies in television sets, home appliances, ac adapters and ballast lighting.

The super junction structure, which has vertical paths to allow electrical current to flow through easily on a silicon substrate, realizes lower RDSON than the theoretical limit of silicon. By applying the super junction structure and optimizing the total device, the RDSON for the same area in Toshiba's DTMOS device achieves a 60% reduction and its gate charge (Qg) achieves a 40% reduction compared with Toshiba's conventional MOSFETs.

Toshiba is also combining a super junction structure with the company's original DTMOS technology. The first device in the family, the TK15A60S, features maximum ratings of 15 A and 600 V with on resistance of 0.3 Ω.

Samples of Toshiba's TK15A60S 15 A, 600 V DTMOS are scheduled for availability in March 2005, with production beginning in April 2005. The devices are priced at $2.90 each.