STMicroelectronics Inc. (Geneva, Switzerland) introduced a 200A version of its advanced family of IGBTs that features low forward-voltage drops at high currents. Such devices belong to the low drop family of ST's IGBTs that ensure low on-voltage losses without using any heavy metal doping or electronic radiation to reduce the lifetime of minority carries. The parts are designed for use in welding and induction heating equipments, as well as in uninterruptible power supplies and switch-mode power supplies.
The STGE200NB60S is part of ST's PowerMESH IGBT family, which uses a patented strip layout. The mesh overlay technology is a new strip-based, high-voltage process made up of a P-type mesh structure diffused onto the N-epitaxial layer of an IGBT. The N+ strip that replaces the cells and represents the emitter of the device is then directly diffused onto the P-mesh layer. The S-suffix indicates that this N-channel part has been optimized for low on-voltage drops at operating frequencies of up to 10kHz. At 600V and 100A, VCE(sat) is less than 1V, at an operating temperature of 100°C.
The parts are offered in an insulated ISOTOP package that contributes to safety. The STGE200NB60S is available now priced at $12.45 in quantities of 5,000 units.
