New Industry Products

Powerex Introduces 2 New 1200V, 100A Dual Silicon Carbide MOSFET Modules

October 12, 2009 by Jeff Shepard

As a result of commercial development, based on advanced work with Cree, Inc. and the United States Air Force Research Laboratory (AFRL), Powerex is now offering two new silicon carbide (SiC) MOSFET modules (QJD1210006 and QJD1210007) that the company says can operate at temperatures well beyond those possible with silicon IGBT-based modules. When compared to a silicon IGBT module of equal rating (operating at a junction temperature of 150°C) the SiC MOSFET-based module is said to have 38% lower conduction losses and 60% lower switching losses for a total power-loss reduction of 54% when operated at 20 kHz.

Offering what Powerex claims is an innovative package design, these modules are constructed in half-bridge configuration and feature 100A of SiC MOSFET per switch with two switches per model. Both styles feature all silicon carbide Schottky diodes for reverse recovery. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

The product ratings and characteristics include: increased junction temperatures of -40 to +200°C; all silicon carbide chips; what is described as an industry leading RDS(on); high speed switching; low switching losses; low capacitance; low drive requirement; 2 versions of Sic Schottky free wheeling diode (50A for QJD1210006; 100A for QJD1210007); and a high power density.

Designed for power systems requiring both low conduction and switching losses, these all SiC MOSFET devices enhance applications which require high efficiency, high frequency and/or high temperature.

The QJD1210006 can be purchased with sample pricing at $9,000 each. The QJD1210007 can be purchased with sample pricing at $9,200 each.