Nexperia Introduces Four AEC-Q101 Qualified ESD Protection Devices to its TrEOS Line
The new units allow for high signal integrity and feature low clamping voltages along with high surge robustness.
All members of Nexperia’s TrEOS ESD protection line exploit active silicon-controlled rectification. This technology enables them to overcome the trade-offs between withstanding ESD, clamping voltage and the non-attenuation of high speed signals.
The new TrEOS devices are aimed at the tough automotive environment. Image courtesy of Nexperia
The devices feature clamping voltages in 3 volt range and capacitances in the area of 0.5 pF. The protection diodes are specified to protect against 10 amp 8/20 µs electrostatic discharge (ESD) pulses; ESD is a critical problem in the automotive environment. Aimed at this challenging arena, the new units can operate with junction temperatures as high as 175℃.
Lukas Droemer, Nexperia product manager commented: “Our TrEOS technology has set the industry benchmark for mobile and computing ESD protection since its launch in 2015. Now, as there is a demand for more and more connectivity in vehicles, Nexperia is continuing to qualify its TrEOS ESD protection portfolio for the automotive sector. With these new parts, automotive design engineers can empower their new systems with the efficiency of TrEOS ESD protection while improving system-level robustness."
The first four members of the PESD2USBx-T series of AEC-Q101-qualified TrEOS ESD protection devices are in mass production now and are available in quantity.
Currently available members of the PESD2USBx-T series
These includes the PESD2USB3UV-T, PESD2USB3UX-T, PESD2USB5UV-T and the PESD2USB5UX-T. Each unit protects two bidirectional lines. These four devices are all available in 2.9 x 1.5 x 1 millimeter SOT23 packages. As mentioned, all are qualified to AEC-Q101 / Automotive grade.
Members of the Nexperia’s new generation of ESD protection diodes are available in SOT23 packages. Image courtesy of Nexperia
Conveniently, Nexperia supplies what it describes as a parametric search page to aid the designer in choosing the most appropriate device parameters for their specific application.
The PESD2USB3UV-T and the PESD2USB3UX-T
Both of these devices operate to a reverse stand-off voltages of 3.3 VRWM
PESD2USB3UV-T
- Clamping voltage: VCL= 2.6 V at IPP = 8 A
- ESD protection up to 18 kV (IEC 61000-4-2)
- Capacitance: Cd = 0.83 pF
PESD2USB3UX-T
- Clamping voltage: VCL= 3.3 V at IPP = 8 A
- ESD protection up to 8 kV (IEC 61000-4-2)
- Capacitance: Cd = 0.56 pF
The PESD2USB5UV-T and the PESD2USB5UX-T
These units both operate to a reverse stand-off voltages of 5 VRWM
PESD2USB5UV-T
- Clamping voltage: VCL= 2.4 V at IPP = 8 A
- ESD protection up to 22 kV (IEC 61000-4-2)
- Capacitance: Cd = 0.76 pF
PESD2USB5UX-T
- Clamping voltage: VCL= 3.3 V at IPP = 8 A
- ESD protection up to 8 kV (IEC 61000-4-2)
- Capacitance: Cd = 0.47 pF
Automotive Applications
In a modern auto, data lines communicating at speeds of over 10 gigabits per second are common. At the same time, the electrically noisy automotive environment presents almost unprecedented challenges to reliable data transmission. These new devices will find application in areas such as:
- Infotainment
- Multimedia
- Advanced Driver Assistance Systems (ADAS)
- Systems exploiting high-speed communications protocols such as USB 3.2 or HDMI
- Low-voltage differential signaling (LVDS) Applications
- SD-card interfaces
- SerDes protection
- Automotive Pixel Link (APIX) applications
The Competition
As reported by MarketWatch, players in this field, aside from Nexperia, include Galaxy Electrical, Infineon, Kexin, LANGTUO, Littelfuse, On Semiconductor, SOCAY, STMicroelectronics, Texas Instruments, Toshiba, Vishay and Yint