IXYS Corp. (Santa Clara, CA) announced the introduction of a new p-channel enhancement mode power MOSFET, the IXTH24P20. The new MOSFET has a continuous drain current rating of 24A, a VDS rating of 200V and an Rds(on) equal to 0.15 ohms. It is packaged in a TO-247 housing.
The IXTH24P20 features a very low turn-on and turn-off time, 36ns and 68ns, respectively. It also has a very low Qg(on) of 150nC. This, together with its package inductance of less than 5nH, makes it suitable for use in very fast switching applications.
IXYS maintains that the IXTH24P20 can fulfill the need for many totem pole output stages for driving heavy loads from +ve and –ve rails, and also in many applications requiring complimentary p-channel power MOSFET along with an equally rated n-channel MOSFET. Use of complementary n-channel and p-channel MOSFETs could also do away with the need for utilizing opto-isolator or transformers as drivers in H-Bridge or three-phase inverter bridges. Many high-power buck converters could also be built by utilizing the IXTH24P20 with simple control strategies. The IXTH24P20 can find use alongside an equally rated n-channel MOSFET in output power stages of Class A; Class AB; and Class D amplifiers, audio amplifiers, servo-motor drives and switching power supplies.
Unit pricing for the IXTH24P20 is $8.70, in quantities of 1,000. Deliveries of sample quantities are from stock with production quantities available in 12-16 weeks.
