IXYS Introduces New TrenchMV™ Power MOSFETs

IXYS Corp. announced the release of a new family of 55 to 100V TrenchMV Power MOSFETs incorporating a proprietary cell design that the company claims significantly reduce on-resistance, thereby enabling improved efficiency.

The company claims that mprovements in the fundamental trench cell design continue to bring many technical advantages to the TrenchMV Power MOSFET family. Optimizations in cell density, structure, topology and feature sizes are claimed to result in improved performance upon previous generations of Trench product. Lower Rdson and gate charge, increased ruggedness and faster switching speeds allow for more power efficient devices in the "mid-voltage" arena. Lower and higher voltage Trench products are also currently in development and will capitalize on the same features.

IXYS provides a wide selection of these new TrenchMV Power MOSFETs. Voltages include 55, 75, 85 and 100V, while currents range from 44 to 280A. These Power MOSFETs are offered in a number of different packages, including the standard TO-247 and a variety of IXYS’ ISOPLUS packages, which provide integral backside case isolation. The IXTC240N055T (55V, 240A, Rdson = 0.004Ω with isolated Rthjc = 1.0K/W) and IXTF200N10T (100V, 200A, Rdson = 0.006Ω with isolated Rthjc = 0.9K/W) are just some examples of ISOPLUS TrenchMV Power MOSFETs.

TrenchMV Power MOSFETS find homes in many rugged hard switching applications. These devices are designed to meet the most robust conditions commonly required by the automotive or industrial sector, while also taming the power hungry applications found in consumer electronics (i.e. LCDs, power audio systems, etc.). Frequent applications include dc-dc conversion, motor control and power distribution systems. The low gate charge found in these devices makes them suitable for high power applications, since lower gate charge increases the power efficiency by reducing the amount of driving current required. This low gate drive requirement also makes TrenchMV Power MOSFETs suitable for paralleling at higher power levels.