IXYS Introduces New Line of High Current Power MOSFETs

IXYS Corp. announced the release of a new line of High Current TrenchMV™ Power MOSFETs in versions ranging from 55 to 100V, utilizing IXYS unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low Rds(on) and an optimized intrinsic reverse diode. This new family of mid-voltage TrenchMV Power MOSFETs is a part of IXYS product line aimed at high power, low voltage power conversion applications.

The new IXYS High Current TrenchMV Power MOSFETs capitalize on the benefits of IXYS Trench MOSFET technology and on proprietary ISOPLUS packaging technology, in this case the ISOPLUS i4-Pak. IXYS Trench MOSFETs provide for very low conduction and switching losses, and are avalanche rated for hard-switching applications. The principal feature of this line of products arises from the joining of IXYS Trench MOSFETs with the reliable, high power handling capability of IXYS discrete ISOPLUS i4-Pak. Silicon current handling has outpaced the ability of most traditional discrete packaging, which typically limits steady state current to 75A. The powerful ISOPLUS i4-Pak is used to full effect in this instance by combining its superior isolation, thermal and power cycling capabilities and flexible configuration. In this case, the ISOPLUS i4-Pak is configured with 5 heavy-gage leads to provide a high current drain and source paired lead set with joined copper webs and backside heat sinking, all of which conservatively improve the lead current rating to 160A.

All IXYS ISOPLUS packages are manufactured with internal direct-copper-bonded (DCB) isolation, are UL certified and provide integral backside case isolation. The IXTF280N055T (rated at 55V, Rds(on) of 0.0028Ω with an Isolated Rth(jc) of 0.30K/W) and IXTF200N10T (rated at 100V, Rds(on) of 0.0054Ω with an Isolated Rth(jc) of 0.30K/W) are just some examples of High Current ISOPLUS i4-Pak TrenchMV Power MOSFETs. These parts provide unique power solutions for high power, low voltage applications at designer-friendly prices. IXYS ISOPLUS packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance. Additionally, the ceramic alumina substrates used also dramatically enhance device reliability due to their superior thermal and power cycling. The DCB can be patterned like a printed circuit board, which enables the unique integration capabilities of IXYS ISOPLUS packages. Kunze high performance phase change materials can be used to further enhance ISOPLUS package thermal performance.

TrenchMV Power MOSFETS find homes in many applications. These devices are designed to withstand even the most robust switching conditions commonly required by the automotive market, as well as the industrial sector. Other applications include dc-dc converters, battery chargers, motor drives and others. Additional Trench products and package options are in process, including options for lower and higher voltages.