International Rectifier Corp. (IR, El Segundo, CA) introduced the industry's first Q101-qualified, dual-HEXFET MOSFETs in the SO-8 package rated for repetitive avalanche up to a maximum junction temperature of 175 degrees C. The new IRF7341Q, IRF7314Q and IRF7103Q dual MOSFETs save up to 70 percent space and are designed for automotive power systems and low-current applications.
The new MOSFETs replace pairs of single MOSFETs in the larger SOT-223, providing space savings, reduced component count and simplified design. The devices are the first dual MOSFETs in the SO-8 package that are Q101-qualified with a maximum junction temperature of 175 degrees C compared to the 150 degrees C currently available for surface-mount packages. The devices also offer a repetitive avalanche rating up to the maximum junction temperature.
The new devices are now available. Pricing begins at $0.37 each in 10,000-unit quantities for the IRF7103Q.
