IR Intros IRF6609/20/23 DirectFET MOSFETs

International Rectifier Corp. (IR, El Segundo, CA) introduced three new devices to its DirectFET™ MOSFET family. The new 20 V n-channel devices are optimized for VRM 10 power systems and high-frequency, high-current, dc-dc converters for next-generation Intel and AMD processors in high-end desktop computers and servers, as well as advanced telecom and datacom systems.

The IRF6623 features enhanced control MOSFET performance, with a 30-percent reduction in device on-resistance and gate charge product, and is 50-percent smaller than other high-performing, 20 V control MOSFETs on the market. The new IRF6620 is suitable for synchronous MOSFET applications up to 35 A. The IRF6620 combines very low gate charge (Qg), Miller charge (Qgd) and reverse recovery charge (QRR) with a 30-percent improvement in RDS(on) compared to other high-performing, 20 V synch MOSFETs on the market. The IRF6609 is designed for the highest performance in high-current (33 A or more), synchronous MOSFET applications. The IRF6609 combines low Qg, Qgd and ultra-low QRR with typical device on-resistance of 1.6 mOhm (2.0 mOhm maximum) at 10 V.

The new DirectFET MOSFETs are available now. Pricing for the IRF6620 is $0.98 each, the IRF6623 is $0.78 each and the IRF6609 is $1.25 each, all in 10,000-unit quantities.