IR Intros IRF2804S Family of Automotive MOSFETs
International Rectifier Corp. (IR, El Segundo, CA) introduced the newest range of trench HEXFET® power MOSFETs, including the IRF2804S with 2.0mOhms in the D2Pak. IR's fabrication process enables minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment. In many applications, this enables a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation, system size and cost, while simplifying power management integration into other systems.
The new automotive MOSFETs feature improved efficiency, switching performance, ruggedness and lower gate charge for high-power automotive applications. The avalanche capability can allow a lower-voltage device to be used (for instance 40V instead of 55V), taking advantage of the lower on-resistance associated with the lower voltage provided the maximum junction temperature is not exceeded.
All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175°C. Pricing for the new trench HEXFET automotive power MOSFETs begins at $2.35 each for the benchmark-performing IRF2804S in 10,000-unit quantities.
