New Industry Products

International Rectifier Introduces Its New HEXFET Packaging

July 09, 2000 by Jeff Shepard

International Rectifier (El Segundo, CA) has introduced the new HEXFET power MOSFETs in packages in which all of the terminals are on a single side of the die. The new FlipFET power MOSFETs will enable a new generation of super-compact power architectures with better power density for advanced portable applications. The first two products being introduced using this technology are the 20V P-channel IRF6100 (single) and IRF6150 (bi-directional dual).

The IRF6100 measures 1.52mm square and the IRF6150 is 3.05mm square. This packaging technology is designed for advanced portable applications, where space is a premium. Many cellular phone, lithium-ion, smart battery packs presently use dual SO-8 MOSFETs. By using FlipFET device technology, it is possible to shrink circuit size, allowing fuel cell volume to be increased by nearly 20 percent and equating an estimated 30 minutes of talk time on a standard three-hour lithium-ion-type battery.

Benefits of the FlipFET devices include one-third the area and same performance versus standard SOIC packages, the same outline with 72-percent Rds(on) reduction versus industry-best TSOP-6, and ultra-low Rds(on) based on the HEXFET trench MOSFET technology. The FlipFET devices feature 0.25mm diameter eutectic solder (63Sn37Pb) bumps with 0.8mm pitch for standard SMT assembly, and are designed to require no under-fill. The solder bump dimensions are similar to those found on ball-grid array and chip-scale packaged devices. Bumps self-align to board pads, and placement errors of up to 0.125mm can be accommodated during assembly.

The new IRF6100 and IRF6150 FlipFET power MOSFETs are available fully tested, packaged, bumps-down on tape and reel. Pricing for the IRF6100 and IRF6150 begins at $0.35 and $1.55, respectively, in quantities of 10,000.