Infineon Begins High-Volume Production of 1200V and 650V SiC MOSFETs
Infineon Technologies AG entered high-volume production of a comprehensive portfolio of 1200V CoolSiC™ MOSFET devices. They are rated from 30mΩ to 350mΩ and implemented in TO247-3, TO247-4, and TO247-2 housings. The expansion also includes a 650V CoolSiC MOSFET product family, and a surface mount device (SMD) portfolio, both to be launched soon.
With these products, Infineon addresses the fast-growing demand for energy-efficient SiC solutions in power conversion scenarios such as sever and telecom switched-mode-power supplies, battery charging infrastructure, photovoltaic inverters, energy storage solutions, and uninterruptable power supplies (UPS).
"At Infineon, the launch of a new base technology is subject to strict quality criteria," said Peter Wawer, Division President Industrial Power Control at Infineon. "Production flows for high volume manufacturing must be proven, for front- and backend even when assembling discrete housings. This includes the collection of statistical data, production monitoring, and application-relevant testing beyond standardized procedures. After the production ramp of the silicon carbide (SiC) MOSFET base technology has been safely completed, we are now bringing the most comprehensive discrete SiC portfolio for industrial applications to the market".
The company says that like all of its previously launched CoolSiC MOSFET lead products in TO247 and Easy power module package, the new discrete devices build on the company's leading trench SiC MOSFET semiconductor process. Infineon developed this process to allow for both the lowest losses in the application while delivering the highest reliability in operation. Moreover, gate-source operating voltages are adopted for discrete package solutions according to related application profiles. A low dynamic loss enables the highest efficiency with a simple unipolar gate drive architecture.
The new Gen 5 CoolSiC MOSFETS in the new TO247-2 package can readily replace silicon diodes for higher efficiency. It has expanded 8.7mm creepage and clearance distances that provide additional safety in high-pollution environments.
Forward currents up to 40 A are available in the new TO247-2 package models for EV dc charging, uninterruptable power supplies, solar energy systems, and other industrial applications.
When used in combination with silicon IGBT or super-junction MOSFET, the CoolSiC Schottky 1200V G5 diode boosts efficiency up to one percent compared to that of a silicon diode. For example, for a PFC boost stage in 3-phase conversion systems or for a Vienna rectifier stage, the output power of the PFC and dc-dc stages can be increased by 40% or more.
Due to its superior efficiency, a CoolSiC Schottky 1200V G5 diode with a 10A rating can serve as a drop-in replacement for a 30A silicon diode.
CoolSiC trench technology offers a particularly high threshold voltage rating (Vth) larger than 4V combined with a low Miller capacitance. For this reason, Infineon says CoolSiC MOSFETs exhibit best-in-class immunity against unwanted parasitic turn-on effects compared to other SiC MOSFETs on the market.
Together with a turn-on gate-source voltage of +18V with 5V margin to maximum rated voltage of +23V, the new Infineon SiC discrete MOSFETs provide an advantage compared with silicon (Si) IGBTs, super-junction MOSFETs as well as over other SiC MOSFETs at highest level.
Including a robust body diode rated for hard commutation, the CoolSiC MOSFET portfolio offers a pathway to achieve the highest energy efficiency. The company says that MOSFET functionality in SiC material offers a new degree of system design flexibility in power factor correction (PFC) circuits, bi-directional topologies and any hard and soft switching DC-DC converters or dc-ac inverters.
The company rounds out its discrete offering with a range of selected driver IC products fulfilling the needs for the ultrafast SiC MOSFET switching.
Together, CoolSiC MOSFETs and EiceDRIVER™ gate driver ICs utilize the advantages of the technology such as enhanced efficiency, space and weight savings, component count reduction, and improved system reliability. Together, these advantages can potentially result in lower system cost, reduced operational expenses, and lower total cost of ownership.
Features of New CoolSiC MOSFETs
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4V
- 0V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- Driver source pin for optimized switching performance
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
The new 1200V CoolSiC MOSFETs in TO247 package can be purchased now with a standard delivery lead-time. Corresponding on-resistance ratings in an SMD portfolio in D 2PAK-7 housing will be available as engineering samples in Q4 2019. The 650V CoolSiC MOSFET engineering samples in TO247-3 and TO247-4 rated at 26mΩ to 107mΩ will also become available in Q4 2019. The CoolSiC™ Schottky 1200V G5 diode portfolio in a TO247-2 pin package can be ordered now in five current classes,10A/15A/20A/30A/40A.
Infineon at the PCIM 2019
At the PCIM 2019 tradeshow, Infineon is displaying innovative product-to-system solutions for applications that could power the world and shape the future. The company's demos are presented at booth #313 in hall 9 (Nuremberg, Germany, 7-9 May 2019). Information about the PCIM show highlights is available on infineon's website.