General Semiconductor Inc. (Melville, NY) has extended its MOSFET portfolio with three new part numbers that are targeted for portable equipment and wireless applications. The GF2301, GF2304 and GF3443 have a cell density of 82-million per square inch. The GF2304 is an N-channel enhancement mode MOSFET, while the GF2301 and GF3443 are P-channel. General Semiconductor claims that all three have low threshold voltages, low gate charge, ultra-low on-resistance, and fast switching speeds.
The new devices are offered in the SOT-23 package. Both the GF2301 and GF2304 have three leads, while the GF3443 is six-leaded. General Semiconductor's SOT-23 packaging utilizes a copper leadframe. This, combined with the cell density of the die, result in current ratings over 2A for the GF2301 and GF2304, and a current rating as high as 4.4A for the GF3443. The devices are suitable for portable and wireless applications, such as notebook computers and cellular phones.
Pricing for the GF2301 and GF2304 is $0.20 each in 10,000-piece quantities. The GF3443 is priced at $0.29 each in similar quantities.
