Dual 15A High-Speed RF MOSFET Driver

IXYS Corporation announced today the introduction of its IXRFD615X2 dual CMOS high-speed, high-current MOSFET gate driver by its IXYS Colorado division. The IXRFD615X2 dual CMOS gate driver is designed and optimized to drive MOSFETs in push-pull and resonant class E push-pull HF RF applications, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. Applications are expected to include: push-pull RF generators, multi-MHz switch mode supplies, pulse transformer drivers, pulse laser diode drivers, and pulse generators.

It can source and sink 15A of peak current per driver while providing voltage rise and fall times of less than 10ns and minimum pulse widths of 8ns. The dual driver offers more flexibility over single output gate drivers by providing two independent ground referenced drivers that can be used in Push-Pull and resonant class E Push-Pull topologies along with differential drive transformer, transducer applications. The driver’s features and wide safety margins in operating voltage and power make the IXRFD615X2 unmatched in performance and value.

The surface mount IXRFD615X2 is packaged in an IXYSRF package incorporating advanced layout techniques to minimize stray lead inductances. This low-inductance, high-power package enables RF high-frequency operations through excellent thermal characteristics.

Features include: Isolated substrate; High isolation voltage (in excess of 2500V); Excellent thermal transfer; Increased temperature and power cycling capability; High Peak Sink and Source Current; Low Output Impedance; Latch-up protected; Low quiescent supply current; and No Beryllium Oxide (BeO) or other hazardous materials.

“The IXRFD615X2 is an exciting addition to IXYSRF’s growing family of components for high frequency power RF system design,” commented Stephen Krausse, General Manager of IXYS Colorado. “It offers more flexible design options in high frequency applications over single output gate drivers.”