Toshiba Electronics Europe has expanded its family of automotive power MOSFETs with the TK1R5R04PB - the first device in its new low-resistance D2PAK+ package. While the D2PAK+ has the same footprint as a conventional D2PAK (or TO-263) package, it offers reduced package resistance. This is thanks to a source pin that is much wider near to the mold surface than that of a conventional D2PAK.
The TK1R5R04PB is rated for 40V and 160A and has a maximum on resistance of 1.5mΩ at VGS = 10V and 2.05mΩ at VGS = 6V. Minimum and maximum voltage threshold ratings (Vth) are 2V and 3V, respectively. The device features a Ciss of 5500pF (typical) and Crss of 490pF (typical).
Toshiba's latest UMOS IX-H wafer process has been used to produce the TK1R5R04PB. U-MOS IX-H has an excellent switching ripple suppression capability and can contribute to EMI noise reduction in applications.
Target applications for the new device include automotive pumps, fans, dc-dc converters and load switches. The TK1R5R04PB will conform with AEC-Q101 automotive level qualification requirements.
