Cree SiC MESFETs Utilized In New MILMEGA UHF Amplifiers
Cree, Inc. announced that MILMEGA is using Cree MESFETs to provide the RF power in its new line of UHF power amplifiers. SiC MESFETs are said to provide greater power density than conventional semiconductor materials, allowing users to achieve greater efficiency and pack more capabilities into a smaller form factor.
MILMEGA’s new power amplifiers are designed for the electromagnetic-compatibility (EMC) and test-instrumentation markets, and the companies claim that the inherent benefits of SiC MESFETs have been exploited to create a robust UHF power amplifier family providing high reliability, exceptional power density, ease of power upgrade and portability.
"We selected Cree SiC MESFET devices based on their power density and efficiency advantages. They enable amplifier products that are up to three times smaller and lighter than those using conventional transistor technology. This provides MILMEGA with a unique advantage in terms of performance and cost versus existing competitive products," noted Pat Moore, MILMEGA Managing Director. "We are encouraged by our customers’ extremely positive feedback on these products from our product launch at the recent IEEE EMC Symposium. Further, we continue to favor Cree’s products within their SiC MESFET and GaN HEMT families and have a number of innovative new products using these devices planned for release in the near future."
"Cree pioneered SiC MESFETS and today leads the world in SiC wide bandgap devices. MILMEGA’s innovative amplifier designs take full advantage of our technology’s superior bandwidth, power and efficiency," stated Jim Milligan, Cree Business Area Manager for Wireless Products. "We are delighted that MILMEGA has chosen our SiC MESFETs to enhance the performance of their new product line."
